Substrate processing method, computer readable recording medium and substrate processing apparatus

• US 20070062453A1
• Filed: 06/15/2006
• Published: 03/22/2007
• Est. Priority Date: 06/15/2005
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Ishikawa, Hiraku
• Granted Patent: US 7,842,356 B2
• Time in Patent Office: Days
• US Class Current: 118/723.R
• CPC Class Codes: C23C 16/26 Deposition of carbon only
• CPC Class Codes: C23C 16/452 by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01L 21/02115 the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/3146 Carbon layers, e.g. diamond-like layers

Abstract

In the present invention, Ar gas for plasma generation is supplied to a plasma generation region and butyne gas having a multiple bond is supplied to a film formation region at a substrate side as source gas, inside of a process vessel in an insulating film forming apparatus. A microwave is supplied inside of the process vessel from a radial line slot antenna under a state in which a bias voltage is not applied to a substrate W. A plasma is thereby generated in the plasma generation region, the butyne gas in the film formation region is activated by the plasma, and an insulating film of amorphous carbon is formed on the substrate.

Claims

1. A substrate processing method, comprising the step of:

forming an insulating film of amorphous carbon on a substrate by supplying hydrocarbon gas having a multiple bond into a process vessel in which the substrate is accommodated, and generating a plasma inside of the process vessel.

2. The substrate processing method according to claim 1,

wherein the hydrocarbon gas is acetylene gas, and

wherein hydrogen gas is supplied into the process vessel in addition to the acetylene gas.

3. The substrate processing method according to claim 2,

wherein the acetylene gas and the hydrogen gas are supplied with a volume ratio of 4:

3 to 4;

1.

4. The substrate processing method according to claim 1,

wherein the hydrocarbon gas is butyne gas.

5. The substrate processing method according to claim 1,

wherein a pressure inside of the process vessel is maintained to be 4.0 Pa or less while the insulating film is formed.

6. The substrate processing method according to claim 1,

wherein the substrate is maintained to be 200°

C. or less while the insulating film is formed.

7. The substrate processing method according to claim 1,

wherein the substrate is heated in an atmosphere containing the hydrogen gas after the insulating film is formed.

8. The substrate processing method according to claim 7, wherein the substrate is heated at a temperature of 350°

C. to 400°

C. after the insulating film is formed.

9. The substrate processing method according to claim 7,

wherein the substrate is maintained in an atmosphere not containing oxygen during a period after the insulating film is formed until the substrate is heated.

10. The substrate processing method according to claim 1,

wherein the plasma is generated inside of the process vessel by using a microwave.

11. The substrate processing method according to claim 1,

wherein inside of the process vessel is sectionalized into a plasma generation region in which the plasma is generated, and a film formation region in which the insulating film is formed on the substrate by using the plasma generated in the plasma generation region,

wherein plasma gas to generate the plasma is supplied to the plasma generation region, and

wherein the hydrocarbon gas is supplied to the film formation region.

12. The substrate processing method according to claim 1,

wherein the plasma is generated inside of the process vessel under a state in which a bias voltage is not applied to the substrate inside of the process vessel.

13. A computer readable recording medium recording a program for causing a computer to realize a substrate processing method in which an insulating film of amorphous carbon is formed on a substrate by supplying hydrocarbon gas having a multiple bond into a process vessel in which the substrate is accommodated, and generating a plasma inside of the process vessel.

14. A substrate processing apparatus, comprising:

a control portion performing a substrate processing method in which an insulating film of amorphous carbon is formed on a substrate by supplying hydrocarbon gas having a multiple bond into a process vessel in which the substrate is accommodated, and generating a plasma inside of the process vessel.