Method and apparatus for processing substrates

• US 20070062646A1
• Filed: 11/20/2006
• Published: 03/22/2007
• Est. Priority Date: 09/25/2000
• Status: Abandoned Application

• Current Assignee: Hitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
• Original Assignee: Hitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
• Inventors: Sato, Takayuki, Ishii, Akinori, Ueda, Tatsushi, Ogawa, Unryu, Takagaki, Tetsuya
• Application Number:
  US11/601,697
• Publication Number:
  US 20070062646A1
• Time in Patent Office: Days
• US Class Current: 156/345.290
• CPC Class Codes: H01J 2237/335 Cleaning
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/67069 for drying etching

Abstract

A substrate processing apparatus includes a processing chamber and a gas supply line, wherein a natural oxide film removing gas including a first gas activated by a second gas activated by a plasma discharge is supplied to the processing chamber through the gas supply line to remove a natural oxide film on a wafer, and wherein the first gas and the second gas are supplied to the gas supply line along a first direction and a second direction and an angle between the first and the second direction ranges from about 90° to 180°.

Claims

1-6. -6. (canceled)

7. A natural oxide films removing apparatus, comprising:

a processing chamber which is evacuated;

a plasma generating chamber in which a plasma is created;

a gas supply line connecting the processing chamber with the plasma generating chamber;

a first gas input line which is provided with a gas injection hole and supplies a first gas into the gas supply line through the gas injection hole; and

a second gas input line which is attached to the plasma generating chamber and supplies a second gas into the gas supply line,

wherein a natural oxide film removing gas including the first gas activated by the second gas activated by a plasma discharge is supplied to the processing chamber through the gas supply line to remove a natural oxide film on a wafer,

wherein the first gas input line is inserted in the gas supply line such that the gas injection hole at the end of the first gas input line faces towards the plasma generating chamber,

wherein the gas injection hole is disposed in a flow of the second gas in the gas supply line and an angle between a direction along which the first gas is injected into the flow of the second gas in the gas supply line through the gas injection hole and a direction of the flow of the second gas at the gas injection hole in the gas supply line is greater than 90°

but equal to or smaller than 180°

, and

wherein when the angle is 180°

, the flow of the first gas is counter-current to the flow of the second gas.

8. The apparatus of claim 7, wherein the first gas is NF₃ gas and the second gas includes at least hydrogen gas and nitrogen gas or ammonia gas.

9. The apparatus of claim 7, further comprising a distribution device means for distributing the natural oxide film removing gas to flow parallel to the wafer.

10. The apparatus of claim 9, wherein the means for distributing the natural oxide film removing gas to flow parallel to the wafer includes one or more distribution plates, each having at least one gas injection opening.

12. The apparatus of claim 7, wherein distance between the gas injection hole and the plasma chamber is not more than 268 mm.

13. The apparatus of claim 7, wherein a direction along which the first gas is injected into the flow of the second gas in the gas supply line through the gas injection hole is the reverse of a direction of the flow of the second gas at the gas injection hole in the gas supply line.

11. A substrate processing apparatus, comprising:

a processing chamber which is evacuated;

a plasma generating chamber in which a plasma is created;

a gas supply line connecting the processing chamber with the plasma generating chamber;

a first gas input line which is provided with a gas injection hole and supplies a first gas into the gas supply line through the gas injection hole; and

a second gas input line which is attached to the plasma generating chamber and supplies a second gas into the gas supply line,

wherein a reaction gas including the first gas activated by the second gas activated by a plasma discharge is supplied to the processing chamber through the gas supply line to process a wafer,

wherein the first gas input line is inserted in the gas supply line such that the gas injection hole at the end of the first gas input line faces towards the plasma generating chamber,

wherein the gas injection hole is disposed in a flow of the second gas in the gas supply line and an angle between a direction along which the first gas is injected into the flow of the second gas in the gas supply line through the gas injection hole and a direction of the flow of the second gas at the gas injection hole in the gas supply line is greater than 90°

but equal to or smaller than 180°

, and

wherein when the angle is 180°

, the flow of the first gas is counter-current to the flow of the second gas.