Semiconductor apparatus having semiconductor circuits made of semiconductor devices, and method of manufacture thereof

• US 20070063199A1
• Filed: 11/16/2006
• Published: 03/22/2007
• Est. Priority Date: 10/06/1998
• Status: Abandoned Application

• Current Assignee: Kenji Kasahara
• Original Assignee: Kenji Kasahara
• Inventors: Kasahara, Kenji
• Application Number:
  US11/600,064
• Publication Number:
  US 20070063199A1
• Time in Patent Office: Days
• US Class Current: 257/59
• CPC Class Codes: H01L 27/1296 adapted to increase the uniformity of device parameters
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile

Abstract

A semiconductor device comprises a first insulating film provided over a substrate and heat-treated, a second insulating film provided over the first insulating film, and a semiconductor film provided over the second insulating film, the second insulating film and the semiconductor film being formed successively without exposing them to the atmosphere.

Claims

1. A semiconductor device comprising:

a substrate;

a first insulating film provided over the substrate;

a second insulating film provided over the first insulating film;

a semiconductor film provided over the second insulating film;

a source region and a drain region provided in the semiconductor film; and

a channel forming region provided in the semiconductor film between the source region and the drain region,

wherein concentration of boron in an interface between the first insulating film and the second insulating film is higher than concentration of boron in an interface between the second insulating film and the channel forming region.

2. An electronic equipment having the semiconductor device according to claim 1, wherein the electronic equipment is one selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a player using a recording medium, a digital camera, a cellular phone and an electronic book.

3. A semiconductor device according to claim 1, wherein the semiconductor film comprises a material selected from the group consisting of silicon, geranium, and Si_xGe_1-x where 0<

x<

1.

4. A semiconductor device according to claim 1, wherein the semiconductor film comprises a crystalline semiconductor film.

5. A semiconductor device according to claim 1, wherein the substrate is one selected from the group consisting of an insulating substrate, a ceramic substrate, a stainless steel substrate, a metal substrate a semiconductor substrate and a plastic substrate.

6. A semiconductor device according to claim 1, wherein the second insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxynitride and silicon oxide.

7. A semiconductor device according to claim 1, wherein the first insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxynitride and silicon oxide.

8. A semiconductor device according to claim 1, wherein the semiconductor device is a liquid crystal display device.

9. A semiconductor device according to claim 1, wherein the concentration of boron in the interface between the first insulating film and the second insulating film is 3×

10¹⁷ atoms/cm³ at maximum.

21. A semiconductor device according to claim 1, wherein the semiconductor film is a semiconductor film of a bottom gate type thin-film transistor.

39. A semiconductor device according to claim 1, wherein stress between the first insulating film and the semiconductor film is different from stress between the second insulating film and the semiconductor film.

10. A semiconductor device comprising:

a substrate;

a first insulating film provide over the substrate;

a second insulating film provided over the first insulating film;

a semiconductor film provided over the second insulating film; and

a channel forming region provided in the semiconductor film,

wherein concentration of boron in an interface between the first insulating film and the second insulating film is higher than concentration of boron in an interface between the second insulating film and the channel forming region, and

wherein the second insulating film is thinner than the first insulating film.

11. An electronic equipment having the semiconductor device according to claim 10, wherein the electronic equipment is one selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a player using a recording medium, a digital camera, a cellular phone and an electronic book.

12. A semiconductor device according to claim 10, wherein the semiconductor film comprises a material selected from the group consisting of silicon, germanium and Si_xGe_1-x where 0<

x<

1.

13. A semiconductor device according to claim 10, wherein the semiconductor film comprises a crystalline semiconductor film.

14. A semiconductor device according to claim 10, wherein the substrate is one selected from the group consisting of an insulating substrate, a ceramic substrate, a stainless steel substrate, a metal substrate, a semiconductor substrate and a plastic substrate.

15. A semiconductor device according to claim 10, wherein the second insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxynitride and silicon oxide.

16. A semiconductor device according to claim 10, wherein the first insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxynitride and silicon oxide.

17. A semiconductor device according to claim 10, wherein the semiconductor device is a liquid crystal display device.

18. A semiconductor device according to claim 10, wherein the concentration of boron in the interface between the first insulating film and the second insulating film is 3×

10¹⁷ atoms/cm³ at maximum.

19. A semiconductor device according to claim 10, wherein the first insulating film has a film of thickness of from 100 to 500 nm.

20. A semiconductor device according to claim 10, wherein the sound insulating film has a film thickness of from 10 to 100 nm.

22. A semiconductor device according to claim 10, wherein the semiconductor film is a semiconductor film of a bottom gate type thin-film transistor.

40. A semiconductor device according to claim 10, wherein stress between the first insulating film and the semiconductor film is different from the stress between the second insulating film and the semiconductor film.

23. A semiconductor device comprising:

a substrate;

a bottom gate type thin-film transistor provided over the substrate, the bottom gate type thin-film transistor comprising;

a first insulating film provided over the substrate;

a second insulating film provided over the first insulating film; and

a semiconductor film including a channel forming region provided over the second insulating film;

wherein concentration of boron in an interface between the first insulating film and the second insulating film is higher than concentration of boron in an interface between the second insulating film and the channel forming region.

25. An electronic equipment having the semiconductor device according to claim 23, wherein the electronic equipment is one selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a player using a recording medium, a digital camera, a cellular phone, and an electronic book.

27. A semiconductor device according to claim 23, wherein the semiconductor film comprises a material selected from the group consisting of silicon, germanium and Si_xGe_1-x where 0<

x<

1.

29. A semiconductor device according to claim 23, wherein the substrate is one selected from the group consisting of an insulating substrate, a ceramic substrate, a stainless steel substrate, a metal substrate, a semiconductor substrate and a plastic substrate.

31. A semiconductor device according to claim 23, wherein the second insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxynitride and silicon oxide.

33. A semiconductor device according to claim 23, wherein the first insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxynitride and silicon oxide.

35. A semiconductor device according to claim 23, wherein the semiconductor device is a liquid crystal display device.

37. A semiconductor device according to claim 23, wherein the concentration of boron in the interface between the first insulating film and the second insulating film is 3×

10¹⁷ atoms/cm³ at maximum.

41. A semiconductor device according to claim 23, wherein stress between the first insulating film and the semiconductor film is different from stress between the second insulating film and the semiconductor film.

24. A semiconductor device comprising:

a substrate;

a bottom gate type thin-film transistor provided over the substrate, the bottom gate type thin-film transistor comprising;

a gate comprising aluminum;

a first gate insulating film provided over the gate;

a second gate insulating film provided over the first gate insulating film; and

a semiconductor film including a channel forming region provided over the second gate insulating film,

wherein concentration of boron in an interface between the first gate insulating film and the second gate insulating film is higher than concentration of boron in an interface between the second gate insulating film and the channel forming region.

26. An electronic equipment having the semiconductor device according to claim 24, wherein the electronic equipment is one selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a player using a recording medium, a digital camera, a cellular phone, and an electronic book.

28. A semiconductor device according to claim 24, wherein the semiconductor film comprises a material selected from the group consisting of silicon, germanium and Si_xGe_1-x where 0<

x<

1.

30. A semiconductor device according to claim 24, wherein the substrate is one selected from the group consisting of an insulating substrate, a ceramic substrate, a stainless steel substrate, a metal substrate, a semiconductor substrate and a plastic substrate.

32. A semiconductor device according to claim 24, wherein the second gate insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxynitride and silicon oxide.

34. A semiconductor device according to claim 24, wherein the first gate insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxynitride and silicon oxide.

36. A semiconductor device according to claim 24, wherein the semiconductor device is a liquid crystal display device.

38. A semiconductor device according to claim 24, wherein the concentration of boron in the interface between the first gate insulating film and the second gate insulating film is 3×

10¹⁷ atoms/cm³ at maximum.

42. A semiconductor device according to claim 24, wherein stress between the first gate insulating film and the semiconductor film is different from stress between the second gate insulating film and the semiconductor film.

43. A method of manufacturing a semiconductor device comprising:

forming a first insulating film over a substrate;

exposing the first insulating film to an atmosphere; and

successively forming a second insulating film and a semiconductor film over the first insulating film without exposing the second insulating film and the semiconductor film to the atmosphere after exposing the first insulating film to the atmosphere.

45. A method of manufacturing a semiconductor device according to claim 43, wherein the semiconductor film is an amorphous silicon film.

47. A method of manufacturing a semiconductor device according to claim 43, wherein the substrate is one selected from the group consisting of an insulating substrate, a ceramic substrate, a stainless steel substrate, a metal substrate, a semiconductor substrate and a plastic substrate.

49. A method of manufacturing a semiconductor device according to claim 43, wherein the second insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxynitride and silicon oxide.

51. A method of manufacturing a semiconductor device according to claim 43, wherein the first insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxynitride and silicon oxide.

53. A method of manufacturing a semiconductor device according to claim 43, wherein the semiconductor device is a liquid crystal display device.

55. A method of manufacturing a semiconductor device according to claim 43, wherein the concentration of boron in the interface between the first insulating film and the second insulating film is 3×

10¹⁷ atoms/cm³ at maximum.

44. A method of manufacturing a semiconductor device comprising:

forming a first insulating film over a substrate;

exposing the first insulating film to an atmosphere;

heating the first insulating film after exposing the first insulating film to the atmosphere; and

successively forming a second insulating film and a semiconductor film over the first insulating film without exposing the second insulating film and the semiconductor film to the atmosphere after heating the first insulating film.

46. A method of manufacturing a semiconductor device according to claim 44, wherein the semiconductor film is an amorphous silicon film.

48. A method of manufacturing a semiconductor device according to claim 44, wherein the substrate is one selected from the group consisting of an insulating substrate, a ceramic substrate, a stainless steel substrate, a metal substrate, a semiconductor substrate and a plastic substrate.

50. A method of manufacturing a semiconductor device according to claim 44, wherein the second insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxynitride and silicon oxide.

52. A method of manufacturing a semiconductor device according to claim 44, wherein the first insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxynitride and silicon oxide.

54. A method of manufacturing a semiconductor device according to claim 44, wherein the semiconductor device is a liquid crystal display device.

56. A method of manufacturing a semiconductor device according to claim 44, wherein the concentration of boron in the interface between the first insulating film and the second insulating film is 3×

10¹⁷ atoms/cm³ at maximum.