Flash memory device and associated recharge method
First Claim
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1. A flash memory device, comprising:
- a first high voltage line;
a second high voltage line; and
, a switch circuit connected between the first and second high voltage lines and adapted to apply a program voltage apparent at the first high voltage line to the second high voltage line during a first program operation, and then apply a voltage apparent at the second high voltage line to the first high voltage line during a second program operation.
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Abstract
A flash memory device comprises first and second mat structures connected to respective first and second high voltage lines, and a switch circuit connected between the first and second high voltage lines. The switch circuit supplies a program voltage from the first high voltage line to the second high voltage line during a first program operation of the flash memory device, and then supplies a voltage from the second high voltage line to the first high voltage line during a second program operation.
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Citations
18 Claims
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1. A flash memory device, comprising:
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a first high voltage line;
a second high voltage line; and
,a switch circuit connected between the first and second high voltage lines and adapted to apply a program voltage apparent at the first high voltage line to the second high voltage line during a first program operation, and then apply a voltage apparent at the second high voltage line to the first high voltage line during a second program operation. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A flash memory device having a 2-MAT structure comprising a plurality of block memory cell arrays, the flash memory device comprising:
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a pump circuit adapted to generate a program voltage;
a first high voltage line connected between the pump circuit and a first MAT comprising a first plurality of memory blocks;
a second high voltage line connected to a second MAT comprising a second plurality of memory blocks;
a word line decoder connected to the first and second high voltage lines and adapted to drive the first and second pluralities of memory blocks with respective voltages apparent on the first and second high voltage lines; and
,a switch circuit connected between the first and second high voltage lines and adapted to supply the program voltage from the first high voltage line to the second high voltage line during a first program operation, and then apply a voltage apparent at the second high voltage line to the first high voltage line during a second program operation. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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16. A method of recharging a flash memory device having a 2-MAT structure and comprising a plurality of memory blocks, the method comprising:
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by operation of a pump circuit, generating a program voltage;
applying the program voltage to a first high voltage line connected to a first MAT to perform a first program operation;
upon completion of the first program operation, applying the program voltage from the first high voltage line to a second high voltage line connected to a second MAT;
applying a voltage apparent at the second high voltage line to the first high voltage line during a second program operation; and
,by operation of the pump circuit, applying the program voltage to the first high voltage line during the second program operation. - View Dependent Claims (17, 18)
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Specification