Method of manufacturing semiconductor device
First Claim
1. A method of manufacturing a semiconductor device having a trench capacitor including:
- a first electrode formed on an inner surface of a trench;
a capacitor insulating film formed on a surface of said first electrode; and
a second electrode formed on a surface of said capacitor insulating film, said method comprising the step of depositing said capacitor insulating film in a form of a hafnium silicate film by utilizing an atomic layer deposition method using a hafnium raw material, a silicon raw material and an oxidizing agent.
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Accused Products
Abstract
The invention aims at enabling leakage current characteristics and a step coverage property to be improved by depositing a hafnium silicate film by utilizing an atomic layer evaporation method using a hafnium raw material, a silicon raw material and an oxidizing agent. Disclosed herein is a method of manufacturing a semiconductor device having a trench capacitor including a first electrode formed on an inner surface of a trench, a capacitor insulating film formed on a surface of the first electrode, and a second electrode formed on a surface of the capacitor insulating film. The method includes the step of depositing the capacitor insulating film in a form of a hafnium silicate film by utilizing an atomic layer deposition method using a hafnium raw material, a silicon raw material and an oxidizing agent.
426 Citations
4 Claims
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1. A method of manufacturing a semiconductor device having a trench capacitor including:
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a first electrode formed on an inner surface of a trench;
a capacitor insulating film formed on a surface of said first electrode; and
a second electrode formed on a surface of said capacitor insulating film, said method comprising the step of depositing said capacitor insulating film in a form of a hafnium silicate film by utilizing an atomic layer deposition method using a hafnium raw material, a silicon raw material and an oxidizing agent. - View Dependent Claims (2, 3, 4)
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Specification