Method of manufacturing semiconductor device

• US 20070066010A1
• Filed: 09/11/2006
• Published: 03/22/2007
• Est. Priority Date: 09/21/2005
• Status: Active Grant

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Ando, Takashi
• Granted Patent: US 7,871,883 B2
• Time in Patent Office: Days
• US Class Current: 438/243
• CPC Class Codes: C23C 16/045 Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/45531 specially adapted for making ternary or higher compositions
• CPC Class Codes: H01L 21/02148 the material containing hafnium, e.g. HfSiOx or HfSiON
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/3141 Deposition using atomic layer deposition techniques [ALD]
• CPC Class Codes: H01L 21/31645 Deposition of Hafnium oxides, e.g. HfO2
• CPC Class Codes: H01L 29/66181 Conductor-insulator-semiconductor capacitors, e.g. trench capacitors

Abstract

The invention aims at enabling leakage current characteristics and a step coverage property to be improved by depositing a hafnium silicate film by utilizing an atomic layer evaporation method using a hafnium raw material, a silicon raw material and an oxidizing agent. Disclosed herein is a method of manufacturing a semiconductor device having a trench capacitor including a first electrode formed on an inner surface of a trench, a capacitor insulating film formed on a surface of the first electrode, and a second electrode formed on a surface of the capacitor insulating film. The method includes the step of depositing the capacitor insulating film in a form of a hafnium silicate film by utilizing an atomic layer deposition method using a hafnium raw material, a silicon raw material and an oxidizing agent.

Claims

1. A method of manufacturing a semiconductor device having a trench capacitor including:

a first electrode formed on an inner surface of a trench;

a capacitor insulating film formed on a surface of said first electrode; and

a second electrode formed on a surface of said capacitor insulating film,

said method comprising the step of

depositing said capacitor insulating film in a form of a hafnium silicate film by utilizing an atomic layer deposition method using a hafnium raw material, a silicon raw material and an oxidizing agent.

2. The method of manufacturing a semiconductor device according to claim 1, wherein in the atomic layer deposition method of depositing said hafnium silicate film,

any of materials expressed by chemical formulas of Hf[N(CH₃) (C₂H₅)]₄, HfCl₄, Hf(C₅H₇O₂)₄, Hf[N(C₂H₅)₂]₄, Hf[N(CH₃)₂]₄ and Hf[O(t-C₄H₉)₂]₄ is used as said hafnium raw material,

any of materials expressed by chemical formulas of SiCl₄, Si₂Cl₆, Si [N(CH₃)₂]₄, [(CH₃)₂SiH]₂O, SiH[N(CH₃)₂]₃, and Si[N(CH₃) (C₂H₅)]₄ is used as said silicon raw material, and

any of materials expressed by chemical formulas of O₃, H₂O and D₂O is used as said oxidizing agent.

3. The method of manufacturing a semiconductor device according to claim 1, wherein a pressure of a film deposition ambient atmosphere in the atomic layer deposition method is set equal to or higher than 267 Pa and equal to lower than 667 Pa.

4. The method of manufacturing a semiconductor device according to claim 1, wherein a temperature of a substrate on which said hafnium silicate film is deposited in the atomic layer deposition method is set equal to or higher than 330°

C. and equal to or lower than 400°

C.