Integrated circuitry production processes, methods, and systems

• US 20070066011A1
• Filed: 11/20/2006
• Published: 03/22/2007
• Est. Priority Date: 04/25/2002
• Status: Abandoned Application

• Current Assignee: Nishant Sinha
• Original Assignee: Nishant Sinha
• Inventors: Sinha, Nishant
• Application Number:
  US11/602,744
• Publication Number:
  US 20070066011A1
• Time in Patent Office: Days
• US Class Current: 438/243
• CPC Class Codes: G03F 7/42 Stripping or agents therefor
• CPC Class Codes: G03F 7/425 containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
• CPC Class Codes: H01L 21/31058 of organic layers
• CPC Class Codes: H01L 21/3212 by chemical mechanical polishing [CMP]
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H01L 28/55 with a dielectric comprising a perovskite structure material
• CPC Class Codes: H01L 28/60 Electrodes
• CPC Class Codes: H01L 28/91 made by depositing layers, e.g. by depositing alternating conductive and insulating layers
• CPC Class Codes: H10B 12/0335 Making a connection between the transistor and the capacitor, e.g. plug

Abstract

The invention includes methods of forming capacitor structures and removing organic material. An organic material, such as a photoresist, is disposed on a substrate. The organic material is contacted with a chemical mechanical polishing pad and a polishing fluid to remove the organic material from the substrate. The polishing fluid can be essentially free of particles, and can be water.

Claims

1-53. -53. (canceled)

54. Removing carbon-comprising material from above a substrate with a pad and a fluid, the fluid comprising a particulate concentration of less than or equal to about 0.1 weight percent at an initiation of the removing.

55. The removing of claim 54 wherein, the pad is a chemical-mechanical-polishing pad.

56. The removing of claim 54 wherein, the substrate is semiconductive.

57. The removing of claim 54 wherein, the fluid is substantially unreactive with the substrate.

58. The removing of claim 54 wherein, the carbon-comprising material also comprises both oxygen and hydrogen.

59. The removing of claim 54 wherein, the carbon-comprising material comprises a resist-material.

60. A carbon-comprising material removal system, comprising:

a substrate support configured to support a substrate having a carbon-comprising material thereon;

a pad configured to physically contact the carbon-comprising material; and

a fluid source, the fluid source configured to provide a fluid to a location between the pad and the material, the fluid comprising a particulate concentration of less than or equal to about 0.1 weight percent.

61. The system of claim 60 wherein the substrate comprises both semiconductive material and conductive material, the conductive material forming a surface of the substrate and having the carbon-comprising material thereon.

62. The system of claim 60 wherein the pad is a chemical-mechanical-polishing pad.

63. The system of claim 62 wherein the pad includes a surface facing the carbon-comprising material, the surface of the pad comprising a polyurethane-material.

64. The system of claim 60 wherein the pad is configured to rotate about an axis.

65. The system of claim 60 wherein the pad is configured to have linear motion along an axis.

66. The system of claim 60 wherein the fluid comprises an additive, the additive being both reactive with the carbon-comprising material and unreactive with the substrate.

67. The system of claim 66 wherein the additive comprises TMAH.

68. An integrated circuitry manufacturing process, comprising:

applying a mask above a semiconductive substrate;

creating a recess within the substrate using the mask; and

removing at least a portion of the mask with a pad and fluid, the fluid substantially lacking in particulates.

69. The process of claim 68 wherein substrate comprises a conductive material and a semiconductive material, the conductive material being a surface of the substrate and contacting the mask.

70. The process of claim 68 wherein the recess is created in at least the conductive material.

71. The process of claim 68 wherein during the removing of the portion of the mask the fluid does not react with the conductive material.

72. The process of claim 68 wherein the mask comprises one of photoresist material or non-photosensitive resist material.

73. The process of claim 68 wherein the mask comprises a polyimide material.