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Fast gas switching plasma processing apparatus

  • US 20070066038A1
  • Filed: 11/17/2006
  • Published: 03/22/2007
  • Est. Priority Date: 04/30/2004
  • Status: Abandoned Application
First Claim
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1. A plasma wafer processing tool, comprising:

  • a plasma chamber with a plasma confinement zone with a volume and at least one electrode;

    a gas distribution system for providing a first gas and a second gas, wherein the gas distribution system can substantially replace one of the first gas and the second gas in the plasma zone with the other of the first gas and the second gas within a period of less than 1 s, wherein a first plasma formed in the plasma zone from the first gas provides a first impedance load and wherein a second plasma formed in the plasma zone from the second gas provides a second impedance load different than the first impedance load;

    a first frequency tuned RF power source for providing power to the at least one electrode in a first frequency range wherein the first frequency tuned RF power source is able to receive reflected RF power and tune an output RF frequency to minimize the reflected RF power; and

    a second frequency tuned RF power source for providing power to the plasma chamber in a second frequency range outside of the first frequency range wherein the second frequency tuned RF power source is able to receive reflected RF power and tune an output RF frequency to minimize the reflected RF power.

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