Defectivity and process control of electroless deposition in microelectronics applications

• US 20070066059A1
• Filed: 10/05/2005
• Published: 03/22/2007
• Est. Priority Date: 09/20/2005
• Status: Active Grant

• Current Assignee: MacDermid Enthone Inc. (Element Solutions Inc)
• Original Assignee: Enthone Incorporated (Element Solutions Inc)
• Inventors: Chen, Qingyun, Paneccasio, Vincent, Stritch, Daniel, Valverde, Charles, Witt, Christian, Petrov, Nicolai, Hurtubies, Richard
• Granted Patent: US 7,615,491 B2
• Time in Patent Office: Days
• US Class Current: 438/678
• CPC Class Codes: C09D 5/10 containing metal dust
• CPC Class Codes: C23C 18/34 using reducing agents
• CPC Class Codes: C23C 18/50 with alloys based on iron, cobalt or nickel
• CPC Class Codes: H01L 21/288 from a liquid, e.g. electrolytic deposition
• CPC Class Codes: H01L 21/76849 the layer being positioned on top of the main fill metal
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.

Claims

18. A method for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the method comprising contacting the substrate with an electroless deposition composition comprising (a) a source of deposition ions selected from the group consisting of Co ions and Ni ions, and b) an oxygen scavenger selected from the group consisting of SO₃²⁻

, HSO₃⁻

, hydroquinone, catechol, resorcinol, hydrazine, and combinations thereof.

1. An electroless deposition composition for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the deposition composition comprising (a) a source of deposition ions selected from the group consisting of Co ions and Ni ions, and b) an oxygen scavenger selected from the group consisting of SO₃²⁻

, HSO₃⁻

, hydroquinone, catechol, resorcinol, hydrazine, and combinations thereof.

2. The electroless deposition composition of claim 1 wherein the oxygen scavenger is selected from the group consisting of SO₃²⁻

, HSO₃⁻

, hydroquinone, catechol, resorcinol, and combinations thereof.

3. The electroless deposition composition of claim 2 wherein the oxygen scavenger comprises SO₃²⁻

, HSO₃⁻

, or a combination thereof.

4. The electroless deposition composition of claim 3 wherein the oxygen scavenger is present in the electroless deposition composition at a concentration between about 0.01 g/L and about 1 g/L.

5. The electroless deposition composition of claim 3 wherein the oxygen scavenger is present in the electroless deposition composition at a concentration between about 0.01 g/L and about 0.3 g/L.

6. The electroless deposition composition of claim 2 wherein the oxygen scavenger comprises hydroquinone.

7. The electroless deposition composition of claim 6 wherein the hydroquinone is present in the electroless deposition composition at a concentration between about 0.01 g/L and about 0.5 g/L.

8. The electroless deposition composition of claim 6 wherein the hydroquinone is present in the electroless deposition composition at a concentration between about 0.01 g/L and about 0.1 g/L.

9. The electroless deposition composition of claim 2 wherein the oxygen scavenger comprises catechol.

10. The electroless deposition composition of claim 9 wherein the catechol is present in the electroless deposition composition at a concentration between about 0.01 g/L and about 0.5 g/L.

11. The electroless deposition composition of claim 9 wherein the catechol is present in the electroless deposition composition at a concentration between about 0.01 g/L and about 0.1 g/L.

12. The electroless deposition composition of claim 2 wherein the oxygen scavenger comprises resorcinol.

13. The electroless deposition composition of claim 12 wherein the resorcinol is present in the electroless deposition composition at a concentration between about 0.01 g/L and about 0.5 g/L.

14. The electroless deposition composition of claim 12 wherein the resorcinol is present in the electroless deposition composition at a concentration between about 0.01 g/L and about 0.1 g/L.

15. The electroless deposition composition of claim 1 wherein the oxygen scavenger comprises hydrazine at a concentration between about 0.01 g/L and about 0.5 g/L.

16. The electroless deposition composition of claim 15 wherein the hydrazine is present in the electroless deposition composition at a concentration between about 0.01 g/L and about 0.1 g/L.

17. A method for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the method comprising contacting the substrate with the electroless deposition composition of claim 1.

19. The method of claim 18 wherein the oxygen scavenger selected from the group consisting of SO₃²⁻

, HSO₃⁻

, hydroquinone, catechol, resorcinol, and combinations thereof.

20. The method of claim 19 wherein the oxygen scavenger comprises SO₃²⁻

, HSO₃⁻

, or a combination thereof.

21. The method of claim 20 wherein the oxygen scavenger is present in the electroless deposition composition at a concentration between about 0.01 g/L and about 1 g/L.

22. The method of claim 19 wherein the oxygen scavenger comprises hydroquinone.

23. The method of claim 22 wherein the hydroquinone is present in the electroless deposition composition at a concentration between about 0.01 g/L and about 0.5 g/L.

24. The method of claim 19 wherein the oxygen scavenger comprises catechol.

26. The method of claim 19 wherein the oxygen scavenger comprises resorcinol.

27. The method of claim 26 wherein the resorcinol is present in the electroless deposition composition at a concentration between about 0.01 g/L and about 0.5 g/L.

28. The method of claim 18 wherein the oxygen scavenger comprises hydrazine at a concentration between about 0.01 g/L and about 0.5 g/L.

24-1. The method of claim 22 wherein the catechol is present in the electroless deposition composition at a concentration between about 0.01 g/L and about 0.5 g/L.