Sealing porous dielectrics with silane coupling reagents

• US 20070066079A1
• Filed: 09/05/2006
• Published: 03/22/2007
• Est. Priority Date: 07/25/2003
• Status: Active Grant

• Current Assignee: Chih-I Wu, Grant Kloster, Xiaorong Morrow
• Original Assignee: Chih-I Wu, Grant Kloster, Xiaorong Morrow
• Inventors: Kloster, Grant, Morrow, Xiaorong, Wu, Chih-I
• Granted Patent: US 7,456,490 B2
• Time in Patent Office: Days
• US Class Current: 438/725
• CPC Class Codes: H01L 21/3105 After-treatment
• CPC Class Codes: H01L 21/31058 of organic layers
• CPC Class Codes: H01L 21/76807 for dual damascene structures
• CPC Class Codes: H01L 21/76826 by contacting the layer with gases, liquids or plasmas
• CPC Class Codes: H01L 21/76831 in via holes or trenches, e.g. non-conductive sidewall liners

Abstract

A method and structure for sealing porous dielectrics using silane coupling reagents is herein described. A sealant chain (silane coupling reagent) is formed from at least silicon, carbon, oxygen, and hydrogen and exposed to a porous dielectric material, wherein the sealant chain reacts with a second chain, that has at least oxygen and is present in the porous dielectric defining the pores, to form a continuous layer over the surface of the porous dielectric.

Claims

1-34. -34. (canceled)

35. An interconnect structure comprising:

a via and a trench defined by an interlayer dielectric;

a continuous silicon dioxide layer covalently linked to the interlayer dielectric; and

a conductive layer disposed on the continuous silicon dioxide layer.

36. The interconnect structure of claim 35, wherein the interlayer dielectric is an oxide.

37. The interconnect structure of claim 35, wherein the interlayer dielectric is a polymer.

38. The interconnect structure of claim 35, further comprising condensed Si—

OCH3 groups on the interlayer dielectric.

39. The interconnect structure of claim 35, wherein the conductive layer is a barrier layer.

40. The interconnect structure of claim 35, wherein the conductive layer comprises tantalum.

41. The interconnect structure of claim 40, wherein the barrier layer comprises tantalum-nitride