MONITORING PROCESSING OF A SUBSTRATE IN A PROCESSING CHAMBER
First Claim
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1. A substrate processing apparatus comprising:
- (a) a process chamber comprising walls defining an enclosure for processing a substrate, and having at least one window to allow a radiation to be transmitted therethrough; and
(b) a process monitoring assembly to monitor a process being conducted in the chamber, the process monitoring assembly comprising a plurality of signal sensors that each receive a radiation that is reflected from the substrate and that passes through the window, each signal sensor being capable of generating a signal in relation to a received radiation.
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Abstract
A substrate processing apparatus comprises a process chamber comprising walls defining an enclosure for processing a substrate, and having at least one window in a wall to allow a radiation to be transmitted therethrough. A process monitoring assembly is provided to monitor a process being conducted in the chamber. The process monitoring assembly comprises a plurality of signal sensors that each receive a radiation reflected from the substrate and that passes through the window, each signal sensor being capable of generating a signal in relation to a received radiation.
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Citations
25 Claims
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1. A substrate processing apparatus comprising:
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(a) a process chamber comprising walls defining an enclosure for processing a substrate, and having at least one window to allow a radiation to be transmitted therethrough; and
(b) a process monitoring assembly to monitor a process being conducted in the chamber, the process monitoring assembly comprising a plurality of signal sensors that each receive a radiation that is reflected from the substrate and that passes through the window, each signal sensor being capable of generating a signal in relation to a received radiation. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A substrate processing apparatus for processing substrate in a plasma, the apparatus comprising:
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(a) a process chamber comprising walls defining an enclosure for processing a substrate in a plasma, and having at least one window in a wall to allow a process monitoring radiation to be transmitted therethrough; and
(b) a process monitoring assembly to monitor a process being conducted in the chamber, the process monitoring assembly comprising at least one signal sensor capable of monitoring, through the window, an optical emission intensity of the plasma in a wide band and generating a plurality of signals indicative of the spectral intensity of the plasma. - View Dependent Claims (22, 23, 24, 25)
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Specification