APPARATUS TO TREAT A SUBSTRATE AND METHOD THEREOF

• US 20070068624A1
• Filed: 09/15/2006
• Published: 03/29/2007
• Est. Priority Date: 09/28/2005
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lee, Jin-seok, Jeon, Yun-kwang, Lee, Yung-hee
• Application Number:
  US11/532,166
• Publication Number:
  US 20070068624A1
• Time in Patent Office: Days
• US Class Current: 156/345.400
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream

Abstract

An apparatus to treat a substrate including a vacuum chamber having a plasma space where plasma is generated and a treating space where a substrate is treated, an extract electrode disposed between the plasma space and the treating space, a power supply to provide power to the extract electrode, and a controller to control the power supply so that a cation beam and a negative charge beam are alternately extracted from a plasma in the plasma space to the treating space.

Claims

1. An apparatus to treat a substrate, comprising:

a vacuum chamber including a plasma space where a plasma is generated and a treating space where a substrate is treated;

an extract electrode disposed between the plasma space and the treating space;

a power supply to provide power to the extract electrode; and

a controller to control the power supply so that a cation beam and a negative charge beam are alternately extracted from the plasma in the plasma space and provided to the treating space.

2. The apparatus to treat the substrate according to claim 1, wherein the negative charge beam comprises at least one of an electron beam and an anion beam.

3. The apparatus to treat the substrate according to claim 1, wherein the extract electrode comprises a plurality of grids.

4. The apparatus to treat the substrate according to claim 3, wherein the plurality of the grids are arranged parallel with each other.

5. The apparatus to treat the substrate according to claim 3, wherein the controller controls the power supply to supply different voltages to the plurality of the grids respectively.

6. The apparatus to treat the substrate according to claim 3, wherein the controller controls the power supply to supply a ground voltage to the grid which contacts the treating space.

7. The apparatus to treat the substrate according to claim 3, further comprising ammeters to measure current values in each of the grids and to transmit the current values to the controller.

8. The apparatus to treat the substrate according to claim 1, wherein the controller controls the power supply so that the cation beam is extracted for a same period of time as the negative charge beam.

9. The apparatus to treat the substrate according to claim 1, wherein the controller controls the power supply so that the cation beam provided to the treating space has the same amount of an electric charge as the negative charge beam provided to the treating space.

10. The apparatus to treat the substrate according to claim 1, further comprising an ammeter to measure a current value in the substrate to be treated and to transmit the current value to the controller.

11. The apparatus to treat the substrate according to claim 1, further comprising a table disposed under the treating space and on which the substrate to be treated is seated.

12. The apparatus to treat the substrate according to claim 1, further comprising:

a coil disposed outside the vacuum chamber to generate an induced-coupled plasma to the plasma space; and

a plasma forming power supply to provide power to the coil.

13. The apparatus to treat the substrate according to claim 12, further comprising an impedance matching unit disposed between the coil and the power supply.

14. The apparatus to treat the substrate according to claim 1, further comprising a reactant gas supply to supply a reactant gas to the plasma space.

15. An extract electrode apparatus to neutralize a cation beam and a negative charge beam usable in an apparatus to treat a substrate using a plasma, comprising:

one or more grids sequentially arranged between the substrate and the plasma in the apparatus to treat a substrate; and

a controller to control voltages supplied to each of the one or more grids to extract the cation beam and the negative charge beam alternately from the plasma and provide the extracted cation beam and the negative charge beam alternately into a space between the extract electrode and the substrate.

16. The extract electrode apparatus of claim 15, wherein the controller comprises:

one or more ammeters to measure currents in each respective grid and to provide the measured results to the controller such that the controller controls the voltages to each of the grids to prevent charge accumulation in the substrate.

17. The extract electrode apparatus of claim 16, wherein the controller further comprises:

a substrate ammeter to measure charge accumulation in the substrate and to provide the measured results to the controller such that the controller controls the voltages to each of the grids to prevent charge accumulation in the substrate.

18. The extract electrode apparatus of claim 16, wherein the controller comprises:

one or more independent power units to provide a respective one of the voltages to each respective grid based on the currents measured by the respective one of the ammeters.

19. The extract electrode apparatus of claim 15, wherein each of the grids has through holes defined therein

20. The extract electrode apparatus of claim 15, wherein the one or more grids comprise:

a first grid furthest from the substrate;

a second grid provided between the first grid and the substrate; and

a third grid provided between the second grid and the substrate.

21. A plasma etching apparatus to treat a substrate, comprising:

a chamber to supply a plasma;

an extract electrode provided in the chamber, including a first grid layer, a second grid layer, and a third grid layer each provided in a same shape and in parallel and vertically arranged and having through holes defined therein; and

a controller to control voltages provided to each of the first, second, and third grids to prevent an accumulation of charges on a substrate within the chamber.

22. The apparatus of claim 21, further comprising a table provided in the chamber to support the substrate to be treated.

23. The apparatus of claim 21, wherein the controller comprises a measuring device to measure a charge on the substrate and controls the voltage based on the measured charge.

24. The apparatus of claim 21, wherein the controller controls the extract electrode to alternately extract a cation beam and a negative charge beam.

25. A method of treating a substrate comprising:

placing a substrate including an exposed insulating layer to be treated on a table inside a vacuum chamber;

generating a plasma in a plasma space adjacent to the table; and

extracting a cation beam and a negative charge beam alternately from the plasma to be provided to the substrate to be treated.

26. The method of treating the substrate according to claim 25, wherein in the extracting of the negative charge beam, the negative charge beam comprises at least one of an electron beam and an anion beam.

27. The method of treating the substrate according to claim 25, wherein in the extracting of the cation, the cation beam is extracted for substantially a same time as the negative charge beam.

28. The method of treating the substrate according to claim 25, wherein in the extracting of the cation, the cation beam has substantially the same amount of an electric charge as the negative charge beam which is provided to the substrate to be treated.

29. The method of treating the substrate according to claim 25, wherein the extracting of the cation beam and negative charged beam, is performed by disposing an extract electrode between the substrate to be treated and the plasma space.