Transparent thin film transistor (TFT) and its method of manufacture
First Claim
1. A transparent Thin Film Transistor (TFT) comprising:
- transparent source and drain electrodes;
a transparent semiconductor activation layer arranged to contact the source and drain electrodes and having source and drain regions arranged therein; and
a doping section arranged between the transparent source and drain electrodes and the transparent activation layer and having the same doping type as that of the source and drain regions and having a doping concentration different from that of the source and drain regions.
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Abstract
A transparent thin film transistor (TFT) and a method of fabricating the same are provided. The transparent TFT includes transparent source and drain electrodes formed of transparent material, a transparent semiconductor activation layer that contacts the source and drain electrodes, that is formed of transparent semiconductor, and in which source and drain regions are formed, and a doping section provided between the transparent source and drain electrodes and the transparent activation layer to have the same doping type as that of the source and drain regions and to have doping concentration different from that of the source and drain regions. At this time, doping during the formation of the doping section is performed by an in-situ method in which a gas containing impurities is sprayed in the same apparatus as the apparatus used for the previous step. Therefore, it is possible to reduce high contact resistance generated when the transparent semiconductor activation layer contacts the transparent electrodes and to thus form ohmic contact.
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Citations
28 Claims
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1. A transparent Thin Film Transistor (TFT) comprising:
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transparent source and drain electrodes;
a transparent semiconductor activation layer arranged to contact the source and drain electrodes and having source and drain regions arranged therein; and
a doping section arranged between the transparent source and drain electrodes and the transparent activation layer and having the same doping type as that of the source and drain regions and having a doping concentration different from that of the source and drain regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of manufacturing a transparent Thin Film Transistor (TFT), the method comprising:
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forming transparent source and drain electrodes of a transparent material;
forming source and drain regions within a transparent semiconductor activation layer of a transparent semiconductor, the transparent semiconductor activation layer contacting the source and drain electrodes;
forming a doping section doped with impurities, the doping section having the same doping type as that of the source and drain regions and having a doping concentration different from that of the source and drain regions. - View Dependent Claims (12, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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13. A transparent Thin Film Transistor (TFT) comprising:
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a gate electrode arranged on a substrate;
a gate insulating layer arranged on the gate electrode;
a transparent semiconductor activation layer of a first transparent semiconductor material arranged on the gate insulating layer and having source and drain regions arranged therein;
doping layers of a second transparent semiconductor material arranged in at least parts of the source and drain regions on the transparent activation layer and having a same doping type as that of the source and drain regions and having a same doping concentration as that of the source and drain regions; and
transparent source electrodes and drain electrodes arranged in at least one region of the regions in which the doping layers are arranged.
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26. A method of manufacturing a transparent Thin Film Transistor (TFT), the method comprising:
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forming a gate electrode;
forming a gate insulating layer on the gate electrode;
forming a transparent semiconductor activation layer of first transparent semiconductor on the gate insulating layer and having source and drain regions formed therein;
forming doping layers of a second transparent semiconductor in at least parts of the source and drain regions on the transparent semiconductor activation layer and having a same doping type as that of the source and drain regions and having a doping concentration different from that of the source and drain regions;
etching the doping layers to divide them into two regions; and
forming transparent source and drain electrodes on the doping layers. - View Dependent Claims (27, 28)
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Specification