Insulated gate semiconductor device having a clamping element to clamp gate-emitter voltage and method of manufacturing thereof
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Abstract
The gate of an IGBT is connected to a gate terminal. One end of a clamping element is connected to an anode terminal. A voltage higher than a clamping voltage is applied between the gate and the emitter, to thereby test the dielectric breakdown voltage of a gate insulating film of the IGBT. The IGBT is eliminated which has a gate insulating film at a dielectric breakdown voltage failing to fall within its proper distribution range. Thereafter, a gate terminal and an anode terminal are wire bonded in the normal IGBT.
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Citations
4 Claims
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1-3. -3. (canceled)
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4. A method of manufacturing a semiconductor device, said semiconductor device comprising an insulated gate semiconductor device and a clamping element for providing voltage clamp between a control electrode and a first current electrode of said insulated gate semiconductor device, said insulated gate semiconductor device and said clamping element being formed on the same chip, said semiconductor device comprising:
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a first terminal formed on said chip, said first terminal being connected to said control electrode of said insulated gate semiconductor device; and
a second terminal formed on said chip, said second terminal being connected to one end of said clamping element, wherein said first and second terminals are connected through a bonding wire, said method comprising the steps of;
applying a voltage of a predetermined level between said control electrode and said first current electrode; and
after said step of applying a voltage, providing wire bonding between said first and second terminals.
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Specification