Ferroelectric varactors suitable for capacitive shunt switching and wireless sensing

• US 20070069264A1
• Filed: 10/05/2006
• Published: 03/29/2007
• Est. Priority Date: 10/20/2003
• Status: Abandoned Application

• Current Assignee: University of Dayton
• Original Assignee: University of Dayton
• Inventors: Gevorgian, Spartak, Subramanyam, Guru, Vorobiev, Andre
• Application Number:
  US11/543,654
• Publication Number:
  US 20070069264A1
• Time in Patent Office: Days
• US Class Current: 257/295
• CPC Class Codes: H01L 29/516 with at least one ferroelectric layer
• CPC Class Codes: H01L 29/93 Variable capacitance diodes, e.g. varactors
• CPC Class Codes: H01L 29/94 Metal-insulator-semiconductors, e.g. MOS
• CPC Class Codes: H01P 1/10 for switching or interrupting in systems using reflection or reradiation of radio, acoustic or other waves G01S7/034
• CPC Class Codes: H01P 3/003 Coplanar lines

Abstract

A ferroelectric varactor suitable for capacitive shunt switching is disclosed. High resistivity silicon with a SiO₂ layer and a patterned metallic layer deposited on top is used as the substrate. A ferroelectric thin-film layer deposited on the substrate is used for the implementation of the varactor. A top metal electrode is deposited on the ferroelectric thin-film layer forming a CPW transmission line. By using the capacitance formed by the large area ground conductors in the top metal electrode and bottom metallic layer, a series connection of the ferroelectric varactor with the large capacitor defined by the ground conductors is created. The large capacitor acts as a short to ground, eliminating the need for vias. In one embodiment, the varactor shunt switch can be used as passive sensor with the capability of being wireless.

Claims

1. A passive sensor, the passive sensor comprising:

a varactor shunt switch, wherein said varactor shunt switch comprises;

a substrate;

a patterned bottom metal layer deposited on said substrate;

a ferroelectric thin film is deposited on said patterned bottom metal layer; and

a top metal electrode deposited on said ferroelectric thin film, wherein said top metal electrode is patterned to form a coplanar waveguide transmission line and wherein the surface potential of said top metal electrode changes in the presence of a form of directed energy,

wherein the capacitance of said varactor shunt switch will change in response to changes of said surface potential.

2. The passive sensor of claim 1, wherein said form of directed energy comprises radio frequency, ultra violet energy, infrared energy, and combinations thereof.

3. The passive sensor of claim 1, wherein said top metal electrode is perforated.

4. The passive sensor of claim 1, wherein a large number of said passive sensors can be fabricated on a single chip.

5. The passive sensor of claim 1, further comprising:

an antenna integrated with said varactor shunt switch for wireless interrogation.

6. A passive sensor, the passive sensor comprising:

a varactor shunt switch, wherein said varactor shunt switch comprises;

a substrate;

a patterned bottom metal layer deposited on said substrate;

a functionalized polymer thin film is spin coated on said patterned bottom metal layer; and

a top metal electrode deposited on said functionalized polymer thin film, wherein said top metal electrode is patterned to form a coplanar waveguide transmission line and wherein the surface potential of said top metal electrode changes in the presence of a chemical or biochemical agent due to a chemical reaction with said functionalized polymer thin film,

wherein the capacitance of said varactor shunt switch will change in response to changes of said surface potential.

7. The passive sensor of claim 6, wherein the conductivity of a functionalized layer coated between the center conductor and the ground lines of said varactor shunt switch will change in said presence of said chemical or biochemical agent.

8. The passive sensor of claim 7, wherein the conductance change of said varactor shunt switch in said presence of said chemical or biochemical agent will affect the ratio of reflected power to input power of said varactor shunt switch.

9. The passive sensor of claim 6, further comprising:

an antenna integrated with said varactor shunt switch for wireless interrogation.

10. A passive piezoelectric sensor, the passive piezoelectric sensor comprising:

a varactor shunt switch, wherein said varactor shunt switch comprises;

a substrate;

a patterned bottom metal layer deposited on said substrate;

a ferroelectric thin film is deposited on said patterned bottom metal layer; and

a top metal electrode deposited on said ferroelectric thin film, wherein said top metal electrode is patterned to form a coplanar waveguide transmission line.

wherein said varactor shunt switch is responsive to changes in pressure or force due to the piezoelectric property of said ferroelectric thin film.

11. The passive sensor of claim 10, wherein said varactor shunt switch can be used as accelerometer.

12. A passive sensor, the passive sensor comprising:

a varactor shunt switch, wherein said varactor shunt switch comprises;

a substrate;

a patterned bottom metal layer deposited on said substrate;

a thin film is deposited on said patterned bottom metal layer; and

a top metal electrode deposited on said thin film, wherein said top metal electrode is patterned to form a coplanar waveguide transmission line,

wherein the capacitance of said varactor shunt switch will change in response to changes of surface potential of said top metal electrode; and

an antenna integrated with said varactor shunt switch, wherein said antenna is responsive to a radio frequency signal sent by a radar.

13. The passive sensor of claim 12, wherein said radar is a continuous wave frequency modulated radar.

14. The passive sensor of claim 12, wherein said passive sensor is powered by said radio frequency signal from said radar.

15. The passive sensor of claim 12, wherein said passive sensor reflects said radio frequency signal back to said radar.

16. The passive sensor of claim 12, wherein a large number of said passive sensors can be fabricated on a single chip.

17. The passive sensor of claim 16, wherein each antenna of each passive sensor of said large number of said passive sensors comprises a different frequency antenna resulting in different impendence changes for each passive sensor in said large number of said passive sensors.

18. The passive sensor of claim 17, wherein each passive sensor of said large number of said passive sensors will absorb different parts of the spectrum.

19. A method of passive sensing, the method comprising:

depositing an adhesion layer on a substrate;

depositing a pattern bottom metal layer on said adhesion layer;

covering said pattern bottom metal layer with a layer of thin film, wherein said pattern bottom metal layer comprises of at least two ground conductors and a shunt conductor;

topping said layer of thin film with a top metal electrode, wherein said top metal electrode comprises of at least two ground conductors and a center signal strip; and

sensing changes in capacitance due to changes in surface potential of said top metal electrode.

20. The method of claim 19, wherein said thin film comprises a ferroelectric.

21. The method of claim 20, wherein said changes in surface potential of said top metal electrode result from directed energy.

22. The method of claim 19, wherein said thin film comprises a functionalized polymer.

23. The method of claim 22, wherein said changes in surface potential of said top metal electrode result from the presence of a chemical or biochemical agent.

24. The method of claim 23, further comprising:

sensing changes in conductiveness in response to said presence of said chemical or biochemical agent.

25. The method of claim 19, further comprising:

integrating an antenna, wherein said antenna is responsive to a radio frequency signal sent by a radar.

26. A method of passive wireless sensing, the method comprising:

depositing an adhesion layer on a substrate;

depositing a pattern bottom metal layer on said adhesion layer;

covering said pattern bottom metal layer with a layer of thin film, wherein said pattern bottom metal layer comprises of at least two ground conductors and a shunt conductor;

topping said layer of thin film with a top metal electrode, wherein said top metal electrode comprises of at least two ground conductors and a center signal strip; and

integrating an antenna, wherein said antenna is responsive to a radio frequency signal sent by a radar.

27. The method of passively wireless sensing of claim 26, wherein said radar is a continuous wave frequency modulated radar.

28. The method of passively wireless sensing of claim 26, wherein said passively wireless sensing is powered by said radio frequency signal sent by said radar.

29. The method of passively wireless sensing of claim 26, further comprising:

reflecting said radio frequency signal back to said radar.

30. A passive sensor, the passive sensor comprising:

a varactor shunt switch, wherein said varactor shunt switch comprises;

a substrate;

a patterned bottom metal layer deposited on said substrate;

a ferroelectric thin film is deposited on said patterned bottom metal layer; and

a top metal electrode deposited on said ferroelectric thin film, wherein said top metal electrode is patterned to form a coplanar waveguide transmission line;

wherein changes in capacitance of said varactor shunt switch resulting from external stimuli are monitored.

31. The passive sensor of claim 30, further comprising:

an antenna integrated with said varactor shunt switch for wireless interrogation.

32. A passive sensor, the passive sensor comprising:

a varactor shunt switch, wherein said varactor shunt switch comprises;

a substrate;

a patterned bottom metal layer deposited on said substrate;

a ferroelectric thin film deposited on said patterned bottom metal layer; and

a top metal electrode deposited on said ferroelectric thin film, wherein said top metal electrode is patterned to form a coplanar waveguide transmission line.

wherein the output of said varactor shunt switch is responsive to changes in capacitance and wherein said changes in capacitance and output are monitored.

33. A passive sensor, the passive sensor comprising:

a varactor shunt switch, wherein said varactor shunt switch comprises;

a substrate;

a patterned bottom metal layer deposited on said substrate;

a thin film is deposited on said patterned bottom metal layer; and

a top metal electrode deposited on said thin film, wherein said top metal electrode is patterned to form a coplanar waveguide transmission line,

wherein the capacitance of said varactor shunt switch will change in response to changes of surface potential of said top metal electrode due to external stimuli and wherein the output of said varactor shunt switch will change in response to the changes of capacitance.

34. A method of passive sensing, the method comprising:

depositing an adhesion layer on a substrate;

depositing a pattern bottom metal layer on said adhesion layer;

covering said pattern bottom metal layer with a layer of thin film, wherein said pattern bottom metal layer comprises of at least two ground conductors and a shunt conductor;

topping said layer of thin film with a top metal electrode, wherein said top metal electrode comprises of at least two ground conductors and a center signal strip; and

sensing changes in capacitance due to changes in surface potential of said top metal electrode resulting from external stimuli.

35. The method of claim 34, further comprising:

integrating an antenna, wherein said antenna is responsive to a radio frequency signal sent by a radar.

36. A method of passive sensing, the method comprising:

depositing an adhesion layer on a substrate;

depositing a pattern bottom metal layer on said adhesion layer;

covering said pattern bottom metal layer with a layer of thin film, wherein said pattern bottom metal layer comprises of at least two ground conductors and a shunt conductor;

topping said layer of thin film with a top metal electrode, wherein said top metal electrode comprises of at least two ground conductors and a center signal strip;

sensing changes in capacitance due to changes in surface potential of said top metal electrode resulting from external stimuli; and

monitoring changes in output due to the changes in capacitance.