Packaged die on PCB with heat sink encapsulant and methods
First Claim
1. An assembly method for a semiconductor assembly having a substrate and a semiconductor chip having a first surface and a second surface comprising:
- attaching at least a portion of the first surface of the semiconductor chip to at least a portion of the substrate;
forming an electrical connection between the semiconductor chip and the substrate;
forming a wall substantially around a periphery of the second surface of the semiconductor chip using a barrier material, the wall around the periphery of the second surface of the semiconductor chip defining a recess, the barrier material having a first thermal conductivity;
extending the barrier material to contact the substrate; and
disposing a heat-dissipating material substantially within the recess, the heat-dissipating material having a second thermal conductivity different than the first thermal conductivity of the barrier material.
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Accused Products
Abstract
An apparatus and a method for providing a heat sink on an upper surface of a semiconductor chip by placing a heat-dissipating material thereon which forms a portion of a glob top. The apparatus comprises a semiconductor chip attached to and in electrical communication with a substrate. A barrier glob top material is applied to the edges of the semiconductor chip on the surface (“opposing surface”) opposite the surface attached to the substrate to form a wall around a periphery of the opposing surface of the semiconductor chip wherein the barrier glob top material also extends to contact and adhere to the substrate. The wall around the periphery of the opposing surface of the semiconductor chip forms a recess. A heat-dissipating glob top material is disposed within the recess to contact the opposing surface of the semiconductor chip.
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Citations
22 Claims
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1. An assembly method for a semiconductor assembly having a substrate and a semiconductor chip having a first surface and a second surface comprising:
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attaching at least a portion of the first surface of the semiconductor chip to at least a portion of the substrate;
forming an electrical connection between the semiconductor chip and the substrate;
forming a wall substantially around a periphery of the second surface of the semiconductor chip using a barrier material, the wall around the periphery of the second surface of the semiconductor chip defining a recess, the barrier material having a first thermal conductivity;
extending the barrier material to contact the substrate; and
disposing a heat-dissipating material substantially within the recess, the heat-dissipating material having a second thermal conductivity different than the first thermal conductivity of the barrier material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of making a semiconductor assembly having a substrate and a plurality of semiconductor chips, each semiconductor chip of the plurality having a first surface and a second surface, comprising:
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attaching a portion of the first surface of each semiconductor chip to a portion of the substrate;
disposing an underfill material substantially between the substrate and each semiconductor chip;
forming an electrical connection between each semiconductor chip and the substrate;
forming a wall substantially around a periphery of the second surface of each semiconductor chip using a barrier material, the wall and the second surface of each semiconductor chip defining a recess, the barrier material having a first thermal conductivity;
extending the barrier material to contact and adhere to the substrate; and
disposing a heat-dissipating material substantially within the recess, the heat-dissipating material having a second thermal conductivity different than the first thermal conductivity of the barrier material. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A heat transfer method for a semiconductor assembly having a substrate and a plurality of semiconductor chips, each semiconductor chip of the plurality having a first surface and a second surface, comprising:
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attaching a portion of the first surface of each semiconductor chip to a portion of the substrate;
disposing an underfill material substantially between the substrate and each semiconductor chip;
forming an electrical connection between each semiconductor chip and the substrate;
forming a wall substantially around a periphery of the second surface of each semiconductor chip using a barrier material, the wall and the second surface of each semiconductor chip defining a recess, the barrier material having a first thermal conductivity;
extending the barrier material to contact and adhere to the substrate; and
disposing a heat-dissipating material substantially within the recess, the heat-dissipating material having a second thermal conductivity different than the first thermal conductivity of the barrier material. - View Dependent Claims (17, 18, 19, 20, 21, 22)
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Specification