System and method for characterizing silicon wafers

• US 20070069760A1
• Filed: 09/08/2006
• Published: 03/29/2007
• Est. Priority Date: 09/08/2005
• Status: Active Grant

• Current Assignee: Siltronic Corporation (Dr. Alexander Wacker Familiengesellschaft Mit Beschrã¤Nkter Haftung)
• Original Assignee: Siltronic Corporation (Dr. Alexander Wacker Familiengesellschaft Mit Beschrã¤Nkter Haftung)
• Inventors: Lite, Kevin
• Granted Patent: US 7,474,114 B2
• Time in Patent Office: Days
• US Class Current: 324/762.50
• CPC Class Codes: G01R 31/2831 Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates G01R31/318511 takes precedence; testing during manufacture H01L22/00

Abstract

A method and system is provided for characterizing silicon wafers. The method and system provide for measuring a resistance between a pair of points on an epitaxial layer of a wafer'"'"'s surface. The points may be substantially equidistant from the center of the wafer. The resistance measuring may be repeated at a series of pairs of points, each pair of points being radially spaced apart from an adjacent pair of points. The series of pairs of points may include a control group of pairs. A figure of merit may be calculated by subtracting from 1.0 the ratio of a minimum resistance of the resistances measured between the pairs of points to an average of the resistances measured between the pairs of points in the control.

Claims

1. A system for use in producing silicon wafers, wherein each wafer defines a center, a circular outer edge, a front surface, and an epitaxial layer on the front surface, the system including a capability for characterizing one or more of the wafers, the system comprising:

an ohmmeter including two leads, each lead including a contact, the ohmmeter configured for measuring a resistance between a pair of points on the epitaxial layer, the points being substantially equidistant from the center of the wafer, the ohmmeter further being configured for measuring a series of resistances between a series of pairs of points, each pair of points being substantially radially spaced apart from an adjacent pair of points, the series of pairs of points including a control group of pairs;

a computer, coupled to the ohmmeter to receive the series of resistances measured by the ohmmeter, the computer programmed to calculate a figure of merit, wherein the figure of merit is determined by subtracting from 1.0 the ratio of a minimum resistance of the resistances measured between the pairs of points to an average of the resistances measured between the pairs of points in the control group.

2. The method system of claim 1 wherein the computer is programmed to use at least about 200 resistances in calculating the figure of merit.

3. The system of claim 1, wherein the ohmmeter spaces apart the point pairs by no more than about 50 microns between each pair.

4. The system of claim 1, wherein the ohmmeter measures the control group of pairs in a region of the wafer between about 9 mm and about 10 mm from the edge of the wafer.

5. The system of claim 1, wherein the ohmmeter measures the series of point pairs in a region of the wafer between the edge of the wafer and about 10 mm from the edge of the wafer.

6. The system of claim 1, wherein the computer is programmed to calculate the minimum resistance between the pairs of points as an average of a subset of the resistances between point pairs, the subset being a selected number of lowest resistance measurements.

7. The system of claim 6, wherein the computer is programmed such that the selected number of lowest resistance measurements is between about 2 and about 100 measurements.

8. The system of claim 1, wherein the computer is programmed to filter out one or more resistance measurements whose difference from adjacent resistance measurements indicates anomalous measurements.

9. The system of claim 1, wherein the ohmmeter is configured to repeat, for at least two times for a single wafer, the resistance measuring between the series of pairs of points and wherein the computer is programmed to calculate at least two figures of merit, and wherein the computer is programmed to determine a filtered figure of merit from the calculated figures of merit.

10. The system of claim 1 for use with a plurality of silicon wafers, wherein the ohmmeter is configured to repeat, for the plurality of silicon wafers, the resistance measuring between the series of point pairs;

and wherein the computer is programmed to calculate the figure of merit for each wafer, and to calculate an average figure of merit for the plurality of wafers.

11. The system of claim 1, wherein the computer is programmed to compare the figure of merit to a control limit.

12. The system of claim 11, wherein the computer is programmed to check the measured resistances for a discontinuity along the series of point pairs.

25. The method of claim 1, wherein the one or more wafers are a sample selected from a production run of silicon wafers.

26. The method of claim 25, further including a step of comparing the figure of merit to a control limit, and, if the figure of merit is greater than the control limit, performing one or more additional tests on one or both of the sample and the production run of wafers.

27. The method of claim 26, wherein the one or more additional tests includes checking the measured resistances for a discontinuity along the series of point pairs.

28. The method of claim 26, wherein the one or more additional tests includes repeating, for the sample of one or more wafers, the steps of resistance measuring between the series of pairs of points and the step of calculating the figure of merit.

29. The method of claim 26, wherein the one or more additional tests includes, identifying an additional sample wafer from the production run of wafers, the additional sample wafer defining a center, a circular outer edge, and a front surface, and including an epitaxial layer extending over the front surface from the center toward the outer edge, the layer extending at least to within about 200 microns of the edge of the wafer, and performing the following steps on the additional sample wafer:

measuring a resistance between a pair of points on the epitaxial layer, the points being substantially equidistant from the center of the wafer;

repeating the step of resistance measuring between a series of pairs of points, each pair of points being substantially radially spaced apart from an adjacent pair of points, the series of pairs of points including a control group of pairs;

calculating a figure of merit for the additional sample wafer, wherein the figure of merit is determined by subtracting from 1.0 the ratio of a minimum resistance of the resistances measured between the pairs of points to the average resistance between the pairs of points in the control group.

13. A method for characterizing one or more silicon wafers, each wafer defining a center, a circular outer edge, and a front surface, each wafer including an epitaxial layer extending over the front surface from the center towards the outer edge, the method comprising:

measuring a resistance between a pair of points on the epitaxial layer, the points being substantially equidistant from the center of the wafer;

repeating the step of resistance measuring between a series of pairs of points, each pair of points being substantially radially spaced apart from an adjacent pair of points, the series of pairs of points including a control group of pairs;

calculating a figure of merit characteristic of the one or more wafers, wherein the figure of merit is determined by subtracting from 1.0 the ratio of a minimum resistance of the resistances measured between the pairs of points to an average of the resistances measured between the pairs of points in the control group.

14. The method of claim 13, wherein the control group includes pairs of points with resistances within a target range.

15. The method of claim 13, wherein the series of point pairs includes at least about 200 pairs.

16. The method of claim 13, wherein the series of point pairs are spaced apart by no more than about 50 microns between each pair.

17. The method of claim 13, wherein the control group of pairs is in a region of the wafer between about 9 mm and about 10 mm from the edge of the wafer.

18. The method of claim 13, wherein the series of point pairs is in a region of the wafer between the edge of the wafer and about 10 mm from the edge of the wafer.

19. The method of claim 13 including, prior to the step of resistance measuring, a step of polishing the wafer in a region where the resistance measuring will be performed.

20. The method of claim 13, wherein the minimum resistance between the pairs of points is calculated as an average of a subset of the resistances between point pairs, the subset being a selected number of lowest resistance measurements.

21. The method of claim 20, wherein the selected number of lowest resistance measurements is between about 2 and about 100 measurements.

22. The method of claim 13, further including a step of filtering out one or more resistance measurements whose difference from adjacent resistance measurements indicates anomalous measurements.

23. The method of claim 13, further including repeating, for at least two times for a single wafer, the steps of resistance measuring between the series of pairs of points and the step of calculating the figure of merit, to calculate at least two figures of merit;

and further including a step of determining a filtered figure of merit from the calculated figures of merit.

24. The method of claim 13, further including repeating, for a plurality of silicon wafers, the steps of resistance measuring between the series of point pairs;

and the step of calculating the figure of merit for each wafer; and

further including a step of calculating an average figure of merit for the plurality of wafers.

30. The method of claim 13 for use with a production run of wafers from which the one or more wafers are taken, the wafers in the production run subject to autodoping during processing, the method further including a step of adjusting a process parameter related to autodoping.

31. A system for characterizing a production run of silicon wafers, wherein a selected wafer from the production run defines a center, a circular outer edge, and a front surface, the selected wafer including an epitaxial layer extending over the front surface from the center toward the outer edge, the layer extending at least to within about 200 microns of the edge of the wafer, the system comprising:

an ohmmeter including two leads, each lead including a contact, the ohmmeter configured for measuring a resistance between a pair of points on the epitaxial layer, the points being substantially equidistant from the center of the wafer, the ohmmeter further being configured for measuring a series of resistances between a series of pairs of points, each pair of points being substantially radially spaced apart from an adjacent pair of points, the series of pairs of points including a control group of pairs;

a computer, coupled to the ohmmeter to receive the series of resistances measured by the ohmmeter, the computer programmed to calculate a figure of merit, wherein the figure of merit is determined by subtracting from 1.0 the ratio of a minimum resistance of the resistances measured between the pairs of points to an average of the resistances measured between the pairs of points in the control group.