Semiconductor device and method for fabricating the same
First Claim
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1. A method for fabricating a semiconductor device, comprising:
- forming a high-k layer insulating layer on a SOI substrate;
forming a gate electrode layer on the high-k insulating layer;
forming a resist layer on the gate electrode layer;
removing selectively the gate electrode layer using the resist layer as a mask; and
removing the resist layer by an ashing process using a gas that does not comprise oxygen.
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Abstract
A method for fabricating a semiconductor device includes the steps of forming a high-k layer insulating layer on a SOI substrate; forming a gate electrode layer on the high-k insulating layer; forming a resist layer on the gate electrode layer; removing selectively the gate electrode layer using the resist layer as a mask; and removing the resist layer by an ashing process using a gas that does not comprise oxygen.
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Citations
21 Claims
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1. A method for fabricating a semiconductor device, comprising:
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forming a high-k layer insulating layer on a SOI substrate;
forming a gate electrode layer on the high-k insulating layer;
forming a resist layer on the gate electrode layer;
removing selectively the gate electrode layer using the resist layer as a mask; and
removing the resist layer by an ashing process using a gas that does not comprise oxygen. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 20)
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12. A method for fabricating a semiconductor device, comprising:
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forming a high-k layer insulating layer on a SOI substrate;
forming a poly-silicon layer for a gate electrode on the high-k insulating layer;
forming a resist layer on the poly-silicon layer;
removing selectively the poly-silicon layer using the resist layer as a mask;
removing the resist layer by an ashing process using a gas that does not comprise oxygen;
performing a wet etching process to remove selectively the high-k insulating layer so as to form a gate insulating layer;
forming source/drain regions; and
forming a silicide region on the gate electrode and source/drain regions. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 21)
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Specification
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Current AssigneeOki Semiconductor Company Limited (ROHM Co., Ltd.)
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Original AssigneeOKI Electric Industry Company Limited
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InventorsSakata, Toyokazu
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Application NumberUS11/526,698Publication NumberTime in Patent OfficeDaysField of SearchUS Class Current438/585CPC Class CodesH01L 21/02148 the material containing haf...H01L 21/02181 the material containing haf...H01L 21/02189 the material containing zir...H01L 21/02194 the material containing mor...H01L 21/28518 the conductive layers compr...H01L 21/31111 by chemical meansH01L 21/31138 by dry-etchingH01L 21/31641 Deposition of Zirconium oxi...H01L 21/31645 Deposition of Hafnium oxide...H01L 21/32137 of silicon-containing layersH01L 29/4908 for thin film semiconductor...H01L 29/517 the insulating material com...H01L 29/665 using self aligned silicida...H01L 29/66628 recessing the gate by formi...H01L 29/66772 Monocristalline silicon tra...
