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Method for plasma etching a chromium layer through a carbon hard mask suitable for photomask fabrication

  • US 20070072435A1
  • Filed: 09/28/2005
  • Published: 03/29/2007
  • Est. Priority Date: 09/28/2005
  • Status: Active Grant
First Claim
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1. A method of etching a chromium layer, comprising:

  • providing a substrate in a processing chamber, the substrate having a chromium layer partially exposed through a patterned carbon hard mask;

    providing a process gas containing chlorine and carbon monoxide into the processing chamber;

    maintaining a plasma formed from the process gas; and

    etching the chromium layer through the carbon hard mask.

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