Shape-memory polymer coated electrodes

• US 20070073130A1
• Filed: 11/08/2004
• Published: 03/29/2007
• Est. Priority Date: 11/06/2003
• Status: Active Grant

• Current Assignee: The Board of Regents of the University of Colorado (University of Colorado System)
• Original Assignee: The Board of Regents of the University of Colorado (University of Colorado System)
• Inventors: Restrepo, Diego, Sharp, Andrew, Gall, Kenneth, Finch, Dudley
• Granted Patent: US 7,689,260 B2
• Time in Patent Office: Days
• US Class Current: 600/372
• CPC Class Codes: A61N 1/0529 Electrodes for brain stimulation
• CPC Class Codes: A61N 1/0536 Preventing neurodegenerative response or inflammatory reaction
• CPC Class Codes: A61N 1/0551 Spinal or peripheral nerve electrodes
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45555 applied in non-semiconductor technology

Abstract

There is provided a slowly implantable electrode. A coating for an electrode, the coating includes a shape-memory polymer. A method for inserting an electrode into brain tissue by inserting an implantable electrode having a shape-memory polymer coated electrode into brain tissue.

Claims

1. A slowly implantable electrode.

2. The electrode according to claim 1, wherein said electrode comprises a MEMS electrode.

3. The electrode according to claim 1, wherein said electrode comprises a shape-memory polymer coated electrode.

4. The electrode according to claim 3, wherein said polymer is bioresorbable.

5. The electrode according to claim 3, wherein said electrode further includes an anti-glutamate coating on an exterior surface of said electrode.

6. The electrode according to claim 1, wherein said electrode further includes an immunosuppressant coating on an exterior surface of said electrode.

7. The electrode according to claim 1, wherein said electrode is coated by a bioresorbable coating.

8. The electrode according to claim 1, wherein said electrode is surface engineered.

14. A method for inserting an electrode into tissue by inserting the electrode of claim 1 into brain tissue.

15. The method according to claim 14, wherein said inserting step includes inserting the electrode into tissue and slowly resorbing the coating into the brain.

16. The method according to claim 14, wherein said inserting step includes slowly inserting the electrode.

17. The method according to claim 14, further including surface engineering the electrode.

18. A method of minimizing trauma and astrocytic scarring by inserting the electrode of claim 1 into body tissue.

19. The method according to claim 18, wherein said inserting step includes inserting the electrode into body tissue and slowly resorbing the coating into the tissue.

20. The method according to claim 18, wherein said inserting step includes slowly inserting the electrode.

9. A coating for an electrode, said coating comprising a shape-memory polymer.

10. The coating according to claim 9, wherein said polymer is bioresorbable.

11. The coating according to claim 9, wherein said coating further includes an anti-glutamate coating on an exterior surface of said electrode.

12. The coating according to claim 9, wherein said coating further includes an immunosuppressant coating on an exterior surface of the electrode.

13. The coating according to claim 9, wherein said coating is surface engineered.

21. A slowly implantable electrode formed using MEMS technology.

22. A slowly implantable electrode formed by coating an electrode with shape-memory polymers.

23. A coating for an electrode, said coating comprising a bioresorbable coating.

24. A slowly implantable electrode formed by coating an electrode with a bioresorbable coating.

25. An electrode for limiting micromovement in vivo, said electrode comprising an electrode and a bioresorbable coating on the exterior surface of said electrode.

26. A coating for limiting micromovement, said coating comprising a bioresorbable coating for placement on the exterior surface of an electrode or array backing.

27. A method of forming a slowly implantable electrode using a formation method capable of forming ultra-fine electrodes.

28. The method according to claim 27, wherein said using step includes using a method selected from the group consisting essentially of two-photon stereo lithography, micro-molding, MEMS, and ESA.

29. A slowly implantable electrode formed according to the method of claim 27.