Semiconductor device and manufacturing process therefor
First Claim
1. A semiconductor device comprising a protruding semiconductor region formed on a substrate, a protruding source/drain region sandwiching the semiconductor region and a gate electrode formed at least on lateral sides of the semiconductor region via an insulating film, wherein the source/drain region has a slope in which at least the largest width is larger than a width of the semiconductor region and width continuously increases from the uppermost side to the substrate side in the source/drain region, and a silicide film is formed on the surface of the slope.
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Accused Products
Abstract
There is provided a semiconductor device wherein at least the largest width of a source/drain region is larger than the width of a semiconductor region and the source/drain region has a slope having a width continuously increasing from the uppermost side to the substrate side, and a silicide film is formed in the surface of the slope.
81 Citations
22 Claims
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1. A semiconductor device comprising a protruding semiconductor region formed on a substrate, a protruding source/drain region sandwiching the semiconductor region and a gate electrode formed at least on lateral sides of the semiconductor region via an insulating film,
wherein the source/drain region has a slope in which at least the largest width is larger than a width of the semiconductor region and width continuously increases from the uppermost side to the substrate side in the source/drain region, and a silicide film is formed on the surface of the slope.
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2. A semiconductor device comprising a plurality of protruding semiconductor regions formed on a substrate, a plurality of source/drain regions sandwiching the semiconductor regions and a gate electrode formed at least on lateral sides of the semiconductor regions via an insulating film,
wherein the plurality of semiconductor regions are aligned in a direction perpendicular to a channel current flow and in parallel with each other, and the gate electrode strides over the plurality of semiconductor regions and extends in a direction perpendicular to the channel current flow, wherein the source/drain regions have slopes in which at least the largest width is larger than a width of the semiconductor region and width continuously increases from the uppermost side to the substrate side in the source/drain regions, and a silicide film is formed on the surface of the slopes.
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3. A semiconductor device comprising a plurality of protruding semiconductor regions formed on a substrate, a paired protruding source/drain region which is common to the plurality of semiconductor regions and sandwiches the plurality of semiconductor regions, and a gate electrode formed at least on lateral sides of the plurality of semiconductor regions via an insulating film,
wherein the plurality of semiconductor regions are aligned in a direction perpendicular to a channel current flow and in parallel with each other, and the gate electrode strides over the plurality of semiconductor regions and extends in a direction perpendicular to the channel current flow, wherein the source/drain region has a concavity and convexity portion in which a cross-sectional area continuously increases from the uppermost side to the substrate side, and a silicide film is formed on the surface of the concavity and convexity portion.
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9. A process for manufacturing a semiconductor device comprising a field effect transistor having a protruding semiconductor region in whose lateral sides a channel is formed, comprising
(a) forming a protruding source/drain region sandwiching the protruding semiconductor region with a gate electrode by selective epitaxial growth to make a slope in which a width of the source/drain region is larger than a width of the semiconductor region and continuously increases from the uppermost side to the substrate side in the source/drain region, and (b) forming a silicide film on the surface of the slope.
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10. A process for manufacturing a semiconductor device comprising a field effect transistor having a plurality of protruding semiconductor regions in whose lateral sides a channel is formed, comprising
(a) forming a gate electrode striding over the plurality of protruding semiconductor regions, then forming a plurality of protruding source/drain regions sandwiching the plurality of semiconductor regions by selective epitaxial growth to make slopes in which a width of the source/drain regions is larger than a width of the semiconductor regions and continuously increases from the uppermost side to the substrate side in the source/drain regions, and (b) forming a silicide film on the surface of the slopes.
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11. A process for manufacturing a semiconductor device comprising a field effect transistor having a plurality of protruding semiconductor regions in whose lateral sides a channel is formed, comprising
(a) forming a gate electrode striding over the plurality of protruding semiconductor regions, then forming a plurality of protruding source/drain regions sandwiching the plurality of semiconductor regions by selective epitaxial growth until adjacent source/drain regions come into contact each other to make a concavity and convexity portion where a cross-sectional area of the source/drain regions continuously increase from the uppermost side to the substrate side in the source/drain regions during the selective epitaxial growth, and (b) forming a silicide film on the surface of the concavity and convexity portion.
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16. A process for manufacturing a semiconductor device comprising a field effect transistor having a protruding semiconductor region in whose lateral sides a channel is formed, comprising,
(a) forming a gate electrode on the protruding semiconductor region and then etching a protruding source/drain region sandwiching the semiconductor region and having a larger width than the width of the semiconductor region, to make a slope in which a width of the source/drain region is larger than a width of the semiconductor region and continuously increases from the uppermost side to the substrate side in the source/drain region, and (b) forming a silicide film on the surface of the slope.
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17. A process for manufacturing a semiconductor device comprising a field effect transistor having a plurality of protruding semiconductor regions in whose lateral sides a channel is formed, comprising,
(a) forming a gate electrode striding over the plurality of protruding semiconductor regions, forming a paired protruding source/drain region sandwiching the plurality of semiconductor regions, and then forming a mask film having a plurality of openings alternately with the plurality of semiconductor regions along the alignment direction of the semiconductor regions on the source/drain region, (b) conducting etching using the mask film to make the paired source/drain region into a plurality of source/drain regions mutually separated sandwiching the plurality of semiconductor regions and during the etching, making slopes in which a width of the source/drain regions is larger than a width of the semiconductor regions and continuously increases from the uppermost side to the substrate side in the source/drain regions, and (c) forming a silicide film on the slopes.
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18. A process for manufacturing a semiconductor device comprising a field effect transistor having a plurality of protruding semiconductor regions in whose lateral sides a channel is formed, comprising,
(a) forming a gate electrode striding over the plurality of protruding semiconductor regions, forming a paired protruding source/drain region sandwiching the plurality of semiconductor regions, and then forming a mask film having a plurality of openings alternately with the plurality of semiconductor regions along the alignment direction of the semiconductor regions on the source/drain region, (b) conducting etching using the mask film to make a concavity and convexity portion in which cross-sectional area continuously increases from the uppermost side to the substrate side in the source/drain region, and (c) forming a silicide film on the concavity and convexity portion.
Specification