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Semiconductor device and manufacturing process therefor

  • US 20070075372A1
  • Filed: 10/19/2004
  • Published: 04/05/2007
  • Est. Priority Date: 10/20/2003
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising a protruding semiconductor region formed on a substrate, a protruding source/drain region sandwiching the semiconductor region and a gate electrode formed at least on lateral sides of the semiconductor region via an insulating film, wherein the source/drain region has a slope in which at least the largest width is larger than a width of the semiconductor region and width continuously increases from the uppermost side to the substrate side in the source/drain region, and a silicide film is formed on the surface of the slope.

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