Method of manufacturing an organic light emitting diode

• US 20070075637A1
• Filed: 09/29/2006
• Published: 04/05/2007
• Est. Priority Date: 09/30/2005
• Status: Active Grant

• Current Assignee: Industry-University Cooperation Foundation Hanyang University, Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Industry-University Cooperation Foundation Hanyang University, Samsung Electronics Co. Ltd.
• Inventors: Kim, Tae-Whan, Choo, Dong-Chul
• Granted Patent: US 7,622,864 B2
• Time in Patent Office: Days
• US Class Current: 313/506
• CPC Class Codes: H10K 50/17 Carrier injection layers

Abstract

A manufacturing method of an organic light emitting diode (“OLED”) includes forming an anode on a substrate, forming an inorganic buffer layer on the anode, forming a hole transport layer on the buffer layer, forming a light emission layer on the hole transport layer, forming an electron transport layer on the light emission layer, and forming a cathode on the electron transport layer. The forming an inorganic buffer layer includes thermal evaporation and oxidation.

Claims

1. A manufacturing method of an organic light emitting diode, comprising:

forming an anode on a substrate;

forming an inorganic buffer layer on the anode;

forming a hole transport layer on the buffer layer;

forming a light emission layer on the hole transport layer;

forming an electron transport layer on the light emission layer; and

forming a cathode on the electron transport layer;

wherein the forming an inorganic buffer layer includes thermal evaporation and oxidation.

2. The method of claim 1, further comprising:

forming an electron injection layer between the light emission layer and the cathode.

3. The method of claim 1, further comprising:

forming a hole injection layer between the inorganic buffer layer and the hold transport layer.

4. The method of claim 1, wherein the inorganic buffer layer comprises at least one of Ni, Zn, and Mg.

5. The method of claim 1, wherein the oxidation is performed at about 550°

C. to about 600°

C.

6. The method of claim 1, wherein the buffer layer has a thickness of about 5 nm to 10 nm.

7. The method of claim 1, wherein the anode comprises indium tin oxide.

8. An organic light emitting diode comprising:

a first and a second electrode formed on a substrate;

a first and a second transport layer formed between the first and second electrodes;

a light emission layer formed between the first and second transport layers;

an inorganic buffer layer formed between the first transport layer and the substrate through thermal evaporation and oxidation.

9. The organic light emitting diode of claim 8, wherein

the first and second electrode are an anode and a cathode, respectively;

and

the first and second transport layer are a hole transport layer and an electron transport layer, respectively.

10. The organic light emitting diode of claim 9, further comprising a first injection layer between the light emission layer and the cathode, the first injection layer being an electron injection layer.

11. The organic light emitting diode of claim 10, further comprising a second injection layer disposed between the buffer layer and the hole transport layer, the second injection layer being a hole injection layer.

12. The organic light emitting diode of claim 8, wherein the inorganic buffer layer comprises at least one of Ni, Zn, Mg and a combination including at least one of the foregoing.

13. The organic light emitting diode of claim 8, wherein the oxidation is performed at about 550°

C. to about 600°

C.

14. The organic light emitting diode of claim 8, wherein the buffer layer has a thickness of about 5 nm to 10 nm.

15. The organic light emitting diode of claim 8, wherein the anode comprises indium tin oxide.