Interposer and electronic device fabrication method

• US 20070076348A1
• Filed: 01/26/2006
• Published: 04/05/2007
• Est. Priority Date: 09/30/2005
• Status: Active Grant

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Shioga, Takeshi, Kurihara, Kazuaki, Ishizuki, Yoshikatsu, Baniecki, John
• Granted Patent: US 7,405,366 B2
• Time in Patent Office: Days
• US Class Current: 361/307
• CPC Class Codes: H01G 4/232 electrically connecting two or more layers of a stacked or rolled capacitor
• CPC Class Codes: H01G 4/30 Stacked capacitors H01G4/33 takes precedence
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68345 used as a support during the manufacture of self supporting substrates
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/16235 the bump connector connecting to a via metallisation of the item
• CPC Class Codes: H01L 2224/16265 the item being a discrete passive component
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01046 Palladium [Pd]
• CPC Class Codes: H01L 2924/01077 Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/15311 being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/19041 being a capacitor
• CPC Class Codes: H01L 2924/30105 Capacitance
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H05K 1/112 directly combined with via connections
• CPC Class Codes: H05K 1/141 : One or more single auxiliary printed circuits mounted on a main printed circuit, e.g. modules, adapters H05K1/142 and H05K1/147 take precedence
• CPC Class Codes: H05K 1/162 : incorporating printed capacitors
• CPC Class Codes: H05K 2201/0179 : Thin film deposited insulating layer, e.g. inorganic layer for printed capacitor
• CPC Class Codes: H05K 2201/09509 : Blind vias, i.e. vias having one side closed
• CPC Class Codes: H05K 2201/096 : Vertically aligned vias, holes or stacked vias
• CPC Class Codes: H05K 2201/10378 : Interposers
• CPC Class Codes: H05K 2201/10674 : Flip chip
• CPC Class Codes: H05K 2203/016 : Temporary inorganic, non-metallic carrier, e.g. for processing or transferring
• CPC Class Codes: H05K 2203/0191 : Using tape or non-metallic foil in a process, e.g. during filling of a hole with conductive paste
• CPC Class Codes: H05K 3/007 : Manufacture or processing of a substrate for a printed circuit board supported by a temporary or sacrificial carrier H05K1/187, H05K3/20 and H05K3/4682 take precedence
• CPC Class Codes: H05K 3/4602 : characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
• CPC Class Codes: Y10T 29/49126 : Assembling bases
• CPC Class Codes: Y10T 29/49128 : Assembling formed circuit to base
• CPC Class Codes: Y10T 29/4913 : Assembling to base an electrical component, e.g., capacitor, etc.
• CPC Class Codes: Y10T 29/49153 : with shaping or forcing terminal into base aperture
• CPC Class Codes: Y10T 29/49155 : Manufacturing circuit on or in base
• CPC Class Codes: Y10T 29/49165 : by forming conductive walled aperture in base

Abstract

An interposer 2 comprising a base 10 formed of a plurality of resin layers 26, 34, 42, 52, 56; a thin-film capacitor 12 buried in the base 10, including a lower electrode 20, a capacitor dielectric film 22 and an upper electrode 24; a first through-electrode 14b formed through the base 10 and electrically connected to the upper electrode 24 of the thin-film capacitor 12; and a second through-electrode 14a formed through the base 10 and electrically connected to the lower electrode 20 of the thin-film capacitor 12, further comprising: an interconnection 48 buried in the base 10 and electrically connected to the respective upper electrodes 24 of a plurality of the thin-film capacitors 12, a plurality of the first through-electrodes 14b being electrically connected to the upper electrodes 24 of said plurality of the thin-film capacitors 12 via the interconnection 48, and said plurality of the first through-electrodes 14b being electrically interconnected by the interconnections 48.

Claims

1. An interposer comprising a base formed of a plurality of resin layers;

a thin-film capacitor buried in the base, including a lower electrode, a capacitor dielectric film formed on the lower electrode, and an upper electrode formed on the capacitor dielectric film;

a first through-electrode formed through the base and electrically connected to the upper electrode of the thin-film capacitor; and

a second through-electrode formed through the base and electrically connected to the lower electrode of the thin-film capacitor, further comprising;

an interconnection buried in the base and electrically connected to the respective upper electrodes of a plurality of the thin-film capacitors,

a plurality of the first through-electrodes being electrically connected to the upper electrodes of said plurality of the thin-film capacitors via the interconnection, and

said plurality of the first through-electrodes being electrically interconnected by the interconnections.

2. An interposer according to claim 1, wherein

the lower electrode is formed solid.

3. An interposer according to claim 1, further comprising

other interconnection buried in the base and electrically connected to the respective lower electrodes of said plurality of the thin-film capacitors,

a plurality of the second through electrodes being electrically interconnected by said other interconnection.

4. An interposer according to claim 1, further comprising

third through-electrode formed through the base and insulated from the thin-film capacitor.

5. An interposer according to claim 1, further comprising

an insulating barrier film covering an upper surface, an under surface and a side surface of the thin-film capacitor, for prohibiting the diffusion of hydrogen or water.

6. An interposer according to claim 5, wherein

the insulating barrier film is formed of an inorganic material.

7. An interposer according to claim 5, wherein

the insulating barrier film is a amorphous film formed of the same material as the capacitor dielectric film.

8. An interposer according to claim 5, wherein

an opening is formed in the insulating barrier film down to the upper electrode,

a conductive barrier film is formed in the opening, for prohibiting the diffusion of hydrogen or water, and

the interconnection is electrically connected to the upper electrode via the conductive barrier film.

9. An interposer according to claim 5, wherein

an opening for exposing at least the side surface of the lower electrode is formed in the base and the insulating barrier film,

a conductive barrier film is formed in the opening, for prohibiting the diffusion of hydrogen or water,

the first through-electrode is buried in the opening with the conductive barrier film formed in, and

the first through-electrode is electrically connected to the lower electrode via the conductive barrier film.

10. An interposer according to claim 1, wherein

the resin layer is formed of polyimide resin, epoxy resin, benzocyclobutene resin, bismaleimide-triazine resin, polytetrafluoroethylene resin, acrylic resin or diallyl phthalate resin.

11. An interposer according to claim 1, wherein

the capacitor dielectric film is formed of a composite oxide containing at least one element of Sr, Ba, Pb, Zr, Bi, Ta, Ti, Mg and Nb.

12. An interposer according to claim 1, wherein

the lower electrode or the upper electrode is formed of Au, Cr, Cu, W, Pt, Pd, Ru, Ru oxide, Ir, Ir oxide, Pt oxide.

13. An electronic device fabrication method comprising the steps of:

fabricating on a substrate an interposer comprising a base formed of a plurality of resin layers;

a thin-film capacitor buried in the base, including a lower electrode, a capacitor dielectric film formed on the lower electrode, and an upper electrode formed on the capacitor dielectric film;

a first through-electrode formed through the base and electrically connected to the upper electrode; and

a second through-electrode formed through the base and electrically connected to the lower electrode of the thin-film capacitor, the interposer further comprising an interconnection buried in the base and electrically connected to the respective upper electrodes of a plurality of the thin-film capacitors; and

a plurality of the first through-electrodes being electrically connected to the upper electrodes of said plurality of the thin-film capacitors via the interconnection;

supporting the interposer by a supporting substrate;

removing the substrate with the interposer supported by the supporting substrate; and

mounting the interposer on another substrate.

14. An electronic device fabrication method according to claim 13, wherein

in the step of supporting the interposer by the supporting substrate, the supporting substrate is adhered to the interposer by a heat foaming type double-sided tape.