Film formation apparatus and methods including temperature and emissivity/pattern compensation

• US 20070077355A1
• Filed: 09/30/2005
• Published: 04/05/2007
• Est. Priority Date: 09/30/2005
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Anderson, Roger, Hunter, Aaron, Metzner, Craig, Chacin, Juan
• Granted Patent: US 7,691,204 B2
• Time in Patent Office: Days
• US Class Current: 427/248.100
• CPC Class Codes: C23C 16/481 by radiant heating of the substrate
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence

Abstract

A film formation system 10 has a processing chamber 15 bounded by sidewalls 18 and a top cover 11. In one embodiment, the top cover 11 has a reflective surface 13 for reflecting radiant energy back onto a substrate 19, pyrometers 405 for measuring the temperature of the substrate 19 across a number of zones, and at least one emissometer 410 for measuring the actual emissivity of the substrate 19. In another embodiment, a radiant heating system 313 is disposed under the substrate support 16. The temperature of the substrate 19 is obtained from pyrometric data from the pyrometers 405, and the emissometer 410.

Claims

1. A substrate processing system comprising:

a processing chamber adapted for the formation of films on the substrate, the chamber including a sidewall surrounding the periphery of the chamber;

a substrate support disposed in the system and adapted to support the substrate;

a top cover disposed above the substrate support to enclose the processing chamber, the top cover comprising a reflective surface for reflecting light back towards the substrate support;

a heating system disposed under the substrate support to heat the substrate to a temperature sufficient for film formation processes, wherein process heating of the substrate is performed exclusively by the heating system;

a plurality of optical probes for collecting light emanating from the substrate, the reflective surface comprising a plurality of openings to provide respective fields of view of the substrate to the optical probes; and

an emissometer for measuring the actual emissivity of the substrate, wherein a temperature of the substrate is calculated utilizing output from at least one of the optical probes and the emissometer.

2. The substrate processing system of claim 1, wherein the field of view of any optical probe does not extend beyond the substrate.

3. The substrate processing system of claim 1, wherein the optical probes are pyrometers.

4. The substrate processing system of claim 1, wherein the optical probes are optically connected to signal processing electronics.

5. The substrate processing system of claim 1, wherein the optical probes are approximately equidistantly radially spaced above the substrate.

6. The substrate processing system of claim 1, wherein the emissometer comprises:

an opening in the reflective surface;

a hot mirror for covering the opening; and

a optical probe for collecting light emanating from the substrate and passing through the hot mirror.

7. The substrate processing system of claim 6, wherein the opening in the reflective surface for the emissometer has a cross-sectional area that is sufficiently large to substantially eliminate the increased effective emissivity of the substrate caused by the reflective surface.

8. The substrate processing system of claim 1, further comprising a peripheral member in contact with a first edge of the sidewall and having an inner peripheral edge extending into the processing chamber that overlaps with an outer edge portion of the substrate support so as to prevent light from the heating system from reaching the top cover.

9. The substrate processing system of claim 8, wherein the substrate support is rotatably mounted in the system, and the outer edge portion does not contact the inner peripheral edge.

10. The substrate processing system of claim 9, wherein a surface of the outer edge portion facing the inner peripheral edge is adapted to optically absorb light from the heating system.

11. The substrate processing system of claim 10, wherein the surface of the outer edge portion facing the inner peripheral edge portion comprises a plurality of grooves.

12. The substrate processing system of claim 9 wherein a surface of the inner peripheral edge facing the outer edge portion is adapted to absorb light from the heating system.

13. The substrate processing system of claim 12, wherein the surface of the inner peripheral edge facing the outer edge portion comprises a roughened surface.

14. The substrate processing system of claim 10, further comprising a second peripheral member adjacent to the sidewall and extending into the processing chamber to overlap with the inner peripheral edge and the outer edge portion.

15. The substrate processing system of claim 1, wherein the reflective surface is adapted to reflect light emanating from the substrate back towards the substrate to increase the effective emissivity of the substrate.

16. The substrate processing system of claim 15, wherein the substrate support comprises a susceptor for heating the substrate, a bottom portion of the susceptor adapted to entirely cover a bottom surface of the substrate and to be heated by the heating system.

17. The substrate processing system of claim 16, wherein the heating system is an irradiative heating system, and the bottom portion of the susceptor is adapted to absorb the light generated by the irradiative heating system.

18. The substrate processing system of claim 17, wherein the irradiative heating system comprises a plurality of lamps, the lamps generating a plurality of heating zones across the substrate, and the heating zones overlap to create a substantially uniform heating distribution across the substrate.

19. The substrate processing system of claim 16, wherein the susceptor is made from a uniform material with a thermal conductivity of at least 100 Watts/(meter °

C.) to uniformly conductively heat the substrate.

20. The substrate processing system of claim 1, wherein the emissometer is a reflectometer.

21. A method of measuring temperature in a chamber adapted to form films on a substrate surface comprising:

measuring radiation emitted only from the substrate during processing to provide a first measurement;

measuring radiation reflected from the processing chamber and emitted from the substrate to provide a second measurement;

comparing the first and second measurements;

calculating the actual wafer emissivity; and

correcting the second measurement to obtain a temperature value.