Manufacturing method of semiconductor device

• US 20070077691A1
• Filed: 09/18/2006
• Published: 04/05/2007
• Est. Priority Date: 09/30/2005
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Watanabe, Ryosuke
• Granted Patent: US 7,928,510 B2
• Time in Patent Office: Days
• US Class Current: 438/149
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 27/1292 using liquid deposition, e.g. printing
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/40 Thermal treatment, e.g. annealing in the presence of a solvent vapour

Abstract

It is an object of the present invention to provide a manufacturing method of a semiconductor device where a semiconductor element is prevented from being damaged and throughput speed thereof is improved, even in a case of thinning or removing a supporting substrate after forming the semiconductor element over the supporting substrate. According to one feature of the present invention, a method for manufacturing a semiconductor device includes the steps of forming a plurality of element groups over an upper surface of a substrate; forming an insulating film so as to cover the plurality of element groups; selectively forming an opening to the insulating film which is located in a region between neighboring two element groups in the plurality of element groups to expose the substrate; forming a first film so as to cover the insulating film and the opening; exposing the element groups by removing the substrate; forming a second film so as to cover the surface of the exposed element groups; and cutting off between the plurality of element groups so as not to expose the insulating film.

Claims

1. A method for manufacturing a semiconductor device comprising the steps of:

forming a plurality of element groups over an upper surface of a substrate;

forming an insulating film so as to cover the plurality of element groups;

selectively forming an opening in a portion of the insulating film to expose the substrate, the portion being provided in a region between neighboring two element groups in the plurality of element groups;

providing a first film so as to cover the insulating film and the opening;

exposing the element groups by removing the substrate;

providing a second film so as to cover the surfaces of the exposed element groups; and

cutting off between the plurality of element groups so as not to expose the insulating film.

2. A method for manufacturing a semiconductor device according to claim 1, wherein the opening is formed by being irradiated with laser light.

3. A method for manufacturing a semiconductor device according to claim 1, wherein the substrate is a grass substrate.

4. A method for manufacturing a semiconductor device according to claim 1, wherein a material having a low elastic modulus than that of a material of the insulating film is used as a material of the first film.

5. A method for manufacturing a semiconductor device comprising the steps of:

forming a base film over an upper surface of a substrate;

forming a plurality of element groups over the base film;

forming an insulating film so as to cover the plurality of element groups;

selectively forming an opening in a portion of the insulating film to expose the substrate or the base film, the portion being provided in a region between neighboring two element groups in the plurality of element groups;

providing a first film so as to cover the insulating film and the opening;

exposing the base film by removing the substrate;

providing a second film so as to cover the surfaces of the exposed base film; and

cutting off between the plurality of element groups so as not to expose the insulating film.

6. A method for manufacturing a semiconductor device according to claim 5, wherein the base film is formed of nitride.

7. A method for manufacturing a semiconductor device according to claim 5, wherein the opening is formed by being irradiated with laser light.

8. A method for manufacturing a semiconductor device according to claim 5, wherein the substrate is a grass substrate.

9. A method for manufacturing a semiconductor device according to claim 5, wherein a material having a low elastic modulus than that of a material of the insulating film is used as a material of the first film.

10. A method for manufacturing a semiconductor device comprising the steps of:

forming a plurality of element groups over an upper surface of a substrate;

forming an insulating film so as to cover the plurality of element groups;

selectively forming an opening in a portion of the insulating film to expose the substrate, the portion being provided in a region between neighboring two element groups in the plurality of element groups;

providing a first film so as to cover the insulating film and the opening;

thinning the substrate from a back surface of the substrate;

removing the thinned substrate by chemical reaction treatment to expose the element groups;

providing a second film so as to cover surfaces of the exposed element groups; and

cutting off between the plurality of element groups so as not to expose the insulating film.

11. A method for manufacturing a semiconductor device according to claim 10, wherein the substrate is thinned by either grinding treatment or polishing treatment, or both.

12. A method for manufacturing a semiconductor device according to claim 10, wherein the chemical reaction treatment is performed by dipping the thinned substrate into a chemical solution.

13. A method for manufacturing a semiconductor device according to claim 10, wherein the opening is formed by being irradiated with laser light.

14. A method for manufacturing a semiconductor device according to claim 10, wherein the substrate is a grass substrate.

15. A method for manufacturing a semiconductor device according to claim 10, wherein a material having a low elastic modulus than that of a material of the insulating film is used as a material of the first film.

16. A method for manufacturing a semiconductor device comprising the steps of:

forming a base film over an upper surface of a substrate;

forming a plurality of element groups over the base film;

forming an insulating film so as to cover the plurality of element groups;

selectively forming an opening in a portion of the insulating film to expose the substrate or the base film, the portion being provided in a region between neighboring two element groups in the plurality of element groups;

providing a first film so as to cover the insulating film and the opening;

thinning the substrate from a back surface of the substrate;

removing the thinned substrate by chemical reaction treatment to expose the element groups;

providing a second film so as to cover surfaces of the exposed element groups; and

cutting off between the plurality of element groups so as not to expose the insulating film.

17. A method for manufacturing a semiconductor device according to claim 16, wherein the substrate is thinned by either grinding treatment or polishing treatment, or both.

18. A method for manufacturing a semiconductor device according to claim 16, wherein the chemical reaction treatment is performed by dipping the thinned substrate into a chemical solution.

19. A method for manufacturing a semiconductor device according to claim 16, wherein the base film is formed of nitride.

20. A method for manufacturing a semiconductor device according to claim 16, wherein the opening is formed by being irradiated with laser light.

21. A method for manufacturing a semiconductor device according to claim 16, wherein the substrate is a grass substrate.

22. A method for manufacturing a semiconductor device according to claim 16, wherein a material having a low elastic modulus than that of a material of the insulating film is used as a material of the first film.