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Method for manufacturing a semiconductor device having a stepped contact hole

  • US 20070077774A1
  • Filed: 09/29/2006
  • Published: 04/05/2007
  • Est. Priority Date: 09/30/2005
  • Status: Abandoned Application
First Claim
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1. A method for manufacturing a semiconductor device comprising:

  • forming a dielectric film on an underlying structure including a semiconductor substrate;

    etching said dielectric film in a first anisotropic dry etching step using a first gas including rare gas, oxygen gas and carbon-rich gas, which is richer than CF4 in carbon content, and a photoresist mask as an etching mask to a specified depth of said dielectric film, to thereby form a first contact hole in said dielectric film;

    depositing a specific film at least within said first contact hole by using a second gas as a source gas;

    etching a first potion of said specific film on a bottom of said first contact hole selectively from a second portion of said specific film on a sidewall thereof in a second anisotropic dry etching step using a third gas as an etching gas, to expose said dielectric film through said bottom of said first contact hole;

    etching said dielectric film exposed from said bottom of said first contact hole in a third anisotropic dry etching step using a fourth gas as an etching gas and said second portion of said specific film as an etching mask, to form a second contact hole extending stepwise from said first contact hole and exposing therefrom said underlying structure; and

    removing said second portion of said specific film on said sidewall of said first contact hole.

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