PLASMA REACTOR CONTROL BY TRANSLATING DESIRED VALUES OF M PLASMA PARAMETERS TO VALUES OF N CHAMBER PARAMETERS
First Claim
1. A method of controlling plural chamber parameters of a plasma reactor in accordance with desired values of plural plasma parameters, comprising:
- concurrently translating a set of M desired values for M plasma parameters selected from a group comprising wafer voltage, ion density, etch rate, wafer current, etch selectivity, ion energy and ion mass, to a set of N values for respective N chamber parameters selected from a group comprising source power, bias power, chamber pressure, inner magnet coil current, outer magnet coil current, inner zone gas flow rate, outer zone gas flow rate, inner zone gas composition, outer zone gas composition, wherein M and N are integers; and
setting said N chamber control parameters to said set of N values.
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Abstract
The invention concerns a method of processing a wafer in a plasma reactor chamber by controlling plural chamber parameters in accordance with desired values of plural plasma parameters. The method includes concurrently translating a set of M desired values for M plasma parameters to a set of N values for respective N chamber parameters. The M plasma parameters are selected from a group including wafer voltage, ion density, etch rate, wafer current, etch selectivity, ion energy and ion mass. The N chamber parameters are selected from a group including source power, bias power, chamber pressure, inner magnet coil current, outer magnet coil current, inner zone gas flow rate, outer zone gas flow rate, inner zone gas composition, outer zone gas composition. The method further includes setting the N chamber parameters to the set of N values.
119 Citations
17 Claims
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1. A method of controlling plural chamber parameters of a plasma reactor in accordance with desired values of plural plasma parameters, comprising:
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concurrently translating a set of M desired values for M plasma parameters selected from a group comprising wafer voltage, ion density, etch rate, wafer current, etch selectivity, ion energy and ion mass, to a set of N values for respective N chamber parameters selected from a group comprising source power, bias power, chamber pressure, inner magnet coil current, outer magnet coil current, inner zone gas flow rate, outer zone gas flow rate, inner zone gas composition, outer zone gas composition, wherein M and N are integers; and
setting said N chamber control parameters to said set of N values. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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Specification