Betavoltaic cell
First Claim
1. A Betavoltaic cell comprising:
- a substrate;
structures formed of semiconductor having voids, wherein the structures comprise shallow p-n junctions; and
electrical contacts coupled to the p-n junctions.
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Accused Products
Abstract
High aspect ratio micromachined structures in semiconductors are used to improve power density in Betavoltaic cells by providing large surface areas in a small volume. A radioactive beta-emitting material may be placed within gaps between the structures to provide fuel for a cell. The pillars may be formed of SiC. In one embodiment, SiC pillars are formed of n-type SiC. P type dopant, such as boron is obtained by annealing a borosilicate glass boron source formed on the SiC. The glass is then removed. In further embodiments, a dopant may be implanted, coated by glass, and then annealed. The doping results in shallow planar junctions in SiC.
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Citations
19 Claims
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1. A Betavoltaic cell comprising:
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a substrate;
structures formed of semiconductor having voids, wherein the structures comprise shallow p-n junctions; and
electrical contacts coupled to the p-n junctions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A Betavoltaic cell comprising:
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a SiC substrate;
high aspect ratio pillars supported by the substrate having voids between the pillars;
shallow pn junctions formed on the pillars;
cathode contacts formed on the pillars;
an anode contact formed on a back side of the substrate; and
a beta radiation fuel disposed in the voids.
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10. A method of doping SiC comprising:
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forming a layer of dopant containing glass on an SiC surface;
annealing the dopant containing glass to diffuse boron into the SiC; and
removing the dopant containing glass. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. A method of doping SiC, the method comprising:
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implanting a dopant into the SiC;
depositing a glass protective layer onto the SiC;
annealing to activate the dopant; and
removing the glass.
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Specification