Synchronous Rectifier Control Circuits

• US 20070081371A1
• Filed: 04/24/2006
• Published: 04/12/2007
• Est. Priority Date: 04/25/2005
• Status: Abandoned Application

• Current Assignee: Ernest Wittenbreder
• Original Assignee: Ernest Wittenbreder
• Inventors: Wittenbreder, Ernest
• Application Number:
  US11/379,820
• Publication Number:
  US 20070081371A1
• Time in Patent Office: Days
• US Class Current: 363/127
• CPC Class Codes: H02M 1/08 Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
• CPC Class Codes: H03K 17/04 Modifications for accelerating switching
• CPC Class Codes: H03K 17/302 in field-effect transistor switches
• CPC Class Codes: H03K 2017/307 circuits simulating a diode, e.g. threshold zero

Abstract

The subject invention reveals a method to sample the drain source voltage of a power mosfet synchronous rectifier during its on time using high speed low voltage analog comparators and operational amplifiers. The method relies on a sampling switch such as a small signal level high voltage enhancement mode mosfet that is enabled when the drain source voltage of the power mosfet is near zero volts. The sampling switch isolates and protects the high speed low voltage analog circuit from the high voltages present on the drain of the power mosfet during the off state of the power mosfet.

Claims

1. A synchronous rectifier circuit comprising,

a power mosfet having a drain terminal, a source terminal, and a gate terminal,

a sampling switch having a first main terminal, a second main terminal, and a control terminal with said first main terminal connected to said drain terminal of said power mosfet, operable substantially in synchronization with said power mosfet,

a high speed comparator circuit having a first input terminal, a second input terminal, and an output terminal with said first input terminal coupled to said second main terminal of said sampling switch and with said second input terminal coupled to said source terminal of said power mosfet,

a gate drive circuit having a first input terminal, a second input terminal, and an output terminal with said first input terminal coupled to said output terminal of said high speed comparator circuit and with said output terminal coupled to said gate terminal of said power mosfet,

whereby said sampling switch enables the sensing of a channel voltage of said power mosfet by said high speed comparator during the time that said power mosfet is enabled and said high speed comparator provides a timing pulse to initiate a turn off transition of said power mosfet when said channel voltage of said power mosfet is substantially zero.

2. The synchronous rectifier circuit of claim 1 wherein said sampling switch comprises an enhancement mode mosfet.

3. The synchronous rectifier circuit of claim 1 wherein said gate driver circuit comprises,

a set/reset flip flop,

a gate drive integrated circuit,

a circuit that senses a drain to source voltage of said power mosfet and holds off gate enhancement of said mosfet until said drain to source voltage of said power mosfet is substantially zero.

4. The synchronous rectifier circuit of claim 1 wherein said high speed comparator circuit comprises,

an amplifier circuit,

a high speed integrated circuit comparator,

a sampling gate that prevents initiation of a turn off transition of said power mosfet until after said power mosfet has been fully enhanced.