Method for forming metal wiring structure
First Claim
1. A method for forming a metal wiring structure including a metal-containing barrier layer, comprising, for producing the metal-containing barrier layer:
- (i) providing a multi-layer structure including an exposed wiring layer and an exposed insulating layer in a reaction space;
(ii) introducing a terminal containing N at least on an exposed surface of the insulating layer in a reducing atmosphere;
(iii) introducing a reducing compound to the reaction space to reduce the introduced terminal, and then purging a reaction space;
(iv) introducing a metal halide compound to the reaction space to replace the introduced reducing compound, and then purging the reaction space; and
(v) introducing a gas containing N to provide a terminal containing N on a surface formed by the introduced metal halide, and then purging the reaction space.
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Accused Products
Abstract
A method for forming a metal wiring structure includes: (i) providing a multi-layer structure including an exposed wiring layer and an exposed insulating layer in a reaction space; (ii) introducing an —NH2 or >NH terminal at least on an exposed surface of the insulating layer in a reducing atmosphere; (iii) introducing a reducing compound to the reaction space and then purging a reaction space; (iv) introducing a metal halide compound to the reaction space and then purging the reaction space; (v) introducing a gas containing N and H and then purging the reaction space; (vi) repeating steps (iii) to (v) in sequence to produce a metal-containing barrier layer; and (vii) forming a metal film on the metal-containing barrier layer.
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Citations
37 Claims
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1. A method for forming a metal wiring structure including a metal-containing barrier layer, comprising, for producing the metal-containing barrier layer:
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(i) providing a multi-layer structure including an exposed wiring layer and an exposed insulating layer in a reaction space;
(ii) introducing a terminal containing N at least on an exposed surface of the insulating layer in a reducing atmosphere;
(iii) introducing a reducing compound to the reaction space to reduce the introduced terminal, and then purging a reaction space;
(iv) introducing a metal halide compound to the reaction space to replace the introduced reducing compound, and then purging the reaction space; and
(v) introducing a gas containing N to provide a terminal containing N on a surface formed by the introduced metal halide, and then purging the reaction space. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
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32. A method for forming a metal wiring structure including a metal-containing barrier layer, comprising, for producing the metal-containing barrier layer:
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(i) providing a multi-layer structure including an exposed wiring layer and an exposed insulating layer;
(ii) introducing —
NH2 or >
NH at least on an exposed surface of the insulating layer in a reducing atmosphere;
(iii) reducing the —
NH2 or >
NH with a reducing compound to provide —
NH-A or >
N-A, wherein A is derived from the reducing compound;
(iv) substitute a metal halide compound for the A to provide —
NH-M or >
N-M, wherein M is derived from the metal halide compound; and
(v) substitute —
NH2 or >
NH for a halogen in the M to provide —
NH-M′
-Tr or >
N-M′
-Tr, wherein M′
is derived from the M, and Tr is the —
NH2 or >
NH. - View Dependent Claims (33, 34)
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35. A method for forming a multiple-layer structure including a metal-containing barrier layer, comprising, for producing the metal-containing barrier layer:
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(i) providing an insulating layer in a reaction space;
(ii) introducing an —
NH2 or >
NH terminal at least on an exposed surface of the insulating layer in a reducing atmosphere;
(iii) introducing a reducing compound to the reaction space and then purging a reaction space;
(iv) introducing a metal halide compound to the reaction space and then purging the reaction space; and
(v) introducing a gas containing N and H and then purging the reaction space;
. - View Dependent Claims (36, 37)
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Specification