Method for manufacturing liquid crystal display device

• US 20070082443A1
• Filed: 11/05/2004
• Published: 04/12/2007
• Est. Priority Date: 11/14/2003
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Maekawa, Shinji, Nakamura, Osamu, Yamazaki, Shunpei
• Granted Patent: US 7,439,086 B2
• Time in Patent Office: Days
• US Class Current: 438/244
• CPC Class Codes: H01L 2224/04026 Bonding areas specifically adapted for layer connectors
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/2929 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/293 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48464 the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
• CPC Class Codes: H01L 2224/83851 being an anisotropic conductive adhesive
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 27/1292 using liquid deposition, e.g. printing
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding

Abstract

A conventionally followed technique of manufacturing a liquid crystal display device is a method for forming various types of coatings over an entire surface of a substrate and for removing the coatings with a small region left by etching, which requires wasting a material cost and treating a large quantity of waste. A liquid crystal display device is manufactured by forming at least one or more of patterns necessary for manufacturing a liquid crystal display device by a method capable of selectively forming a pattern. A droplet discharge method capable of forming a predetermined pattern by selectively discharging a droplet of a composition prepared for a specific purpose is employed as the method capable of selectively forming a pattern.

Claims

1. A method for manufacturing a liquid crystal display device, comprising the steps of:

forming a first electrode over a substrate;

forming a first insulating film to cover the first electrode;

forming a first semiconductor layer over the first insulating film;

forming a second insulating film over the first semiconductor layer to overlap the first electrode;

forming an n-type second semiconductor layer to cover the second insulating film;

patterning the first and second semiconductor layers into an island shape;

forming a second and a third electrodes over the second semiconductor layer;

etching the second semiconductor layer using the second and the third electrode as a mask to be separated; and

forming a fourth electrode to be in contact with the third electrode,

wherein at least one of the first electrode, the second electrode, the third electrode and the fourth electrode is formed by a droplet discharge method.

7. A method for manufacturing a liquid crystal display device, according to any one of claims 1 to 6, wherein base treatment is performed on a formation face before an electrode is formed by a droplet discharge method.

8. A method for manufacturing a liquid crystal display device, according to any one of claims 1 to 6, wherein base treatment is performed on an electrode before a film to be in contact with the electrode is formed by a droplet discharge method.

9. A method for manufacturing a liquid crystal display device, according to claim 7, wherein a substance having a photocatalytic function is formed on a formation face as base treatment and the substance having a photocatalytic function is selectively irradiated with light to be hydrophilic.

10. A method for manufacturing a liquid crystal display device, according to claim 7, wherein plasma treatment is performed as base treatment on a formation face to be liquid-repellent.

11. A method for manufacturing a liquid crystal display device, according to claim 8, wherein a substance having a photocatalytic function is formed on a formation face as base treatment and the substance having a photocatalytic function is selectively irradiated with light to be hydrophilic.

12. A method for manufacturing a liquid crystal display device, according to claim 8, wherein plasma treatment is performed as base treatment on a formation face to be liquid-repellent.

2. A method for manufacturing a liquid crystal display device, comprising the steps of:

forming a first electrode over a substrate;

forming a first insulating film to cover the first electrode;

forming a first semiconductor layer over the first insulating film;

forming a second insulating film over the first semiconductor layer to overlap the first electrode;

forming an n-type second semiconductor layer to cover the second insulating film;

patterning the first and second semiconductor layers into an island shape;

forming a second and a third electrodes over the second semiconductor layer;

etching the second semiconductor layer using the second and the third electrode as a mask to be separated;

forming a third insulating film over the second electrode, the third electrode and the first insulating film;

forming an opening in third insulating film, and

forming a fourth electrode over the third insulating film,

wherein the fourth electrode is electrically connected with the third electrode through the opening, and

wherein at least one of the first electrode, the second electrode, the third electrode and the fourth electrode is formed by a droplet discharge method.

3. A method for manufacturing a liquid crystal display device, comprising the steps of:

forming a first electrode over a substrate;

forming a first insulating film to cover the first electrode;

forming a first semiconductor layer over the first insulating film;

forming a second insulating film over the first semiconductor layer to overlap the first electrode;

forming an n-type second semiconductor layer to cover the second insulating film;

patterning the first and the second semiconductor layers into an island shape;

forming a second and a third electrodes over the second semiconductor layer;

etching the second semiconductor layer using the second and the third electrode as a mask to be separated;

forming a third insulating film having an opening by a droplet discharge method; and

forming a fourth electrode over the third insulating film,

wherein the third insulating film is formed over the second electrode, the third electrode and the first insulating film,

wherein the fourth electrode is electrically connected with the third electrode through the opening, and

wherein at least one of the first electrode, the second electrode, the third electrode and the fourth electrode is formed by a droplet discharge method.

4. A method for manufacturing a liquid crystal display device, comprising the steps of:

forming a first electrode over a substrate having an insulating surface;

forming a first insulating film to cover the first electrode;

forming a second electrode over the first insulating film;

forming a first semiconductor layer over the first insulating film and the second electrode;

forming a second insulating film over the first semiconductor layer to overlap the first electrode;

forming an n-type second semiconductor layer to cover the second insulating film;

patterning the first and the second semiconductor layers into an island shape;

forming a third arid a fourth electrodes over the second semiconductor layer; and

etching the second semiconductor layer using the third and the fourth electrodes as a mask to be separated,

wherein the second electrode is electrically connected with the fourth electrode, and

wherein at least one of the first electrode, the second electrode, the third electrode and the fourth electrode is formed by a droplet discharge method.

5. A method for manufacturing a liquid crystal display device, comprising the steps of:

forming a first and a second electrodes over a substrate having an insulating surface;

forming a third electrode to partially overlap the second electrode;

forming an n-type first semiconductor layer over the first electrode, the second electrode, and the third electrode;

separating the first semiconductor layer into a first semiconductor island in contact with the first electrode and a second semiconductor island in contact with the second electrode;

forming a second semiconductor layer over the first and the second semiconductor islands;

forming an insulating film over the second semiconductor layer;

forming a fourth electrode over the insulating film and over a first region; and

patterning the second semiconductor layer and the insulating film into an island shape,

wherein the first region is between the first semiconductor island and the second semiconductor island, and

wherein at least one of the first electrode, the second electrode, the third electrode and the fourth electrode is formed by a droplet discharge method.

6. A method for manufacturing a liquid crystal display device, comprising the steps of:

forming a first electrode over a substrate having an insulating surface;

forming a second electrode and a third electrode over the substrate;

forming an n-type first semiconductor layer over the first electrode, the second electrode, and the third electrode;

separating the first semiconductor layer into a first semiconductor island in contact with the second electrode and a second semiconductor island in contact with the third electrode;

forming a second semiconductor layer over the first and second the semiconductor islands;

forming an insulating film over the second semiconductor layer;

forming a fourth electrode over the insulating film and over a first region; and

patterning the second semiconductor layer and the insulating film into an island shape,

wherein the third electrode is partially overlaps the first electrode,

wherein the first region is between the first semiconductor island and the second semiconductor island, and

wherein at least one of the first electrode, the second electrode, the third electrode and the fourth electrode is formed by a droplet discharge method.