Method of fabricating GaN substrate
First Claim
1. A method of fabricating a freestanding gallium nitride (GaN) substrate, the method comprising:
- preparing a GaN substrate layer within a reactor;
supplying HCl and NH3 gases into the reactor to treat a surface of the GaN substrate layer and forming a porous GaN layer in the GaN substrate layer;
forming a GaN crystal growth layer on the porous GaN layer; and
cooling the GaN substrate layer on which the porous GaN layer and the GaN crystal growth layer are formed and separating the GaN crystal growth layer from the GaN substrate layer and GaN porous layer to provide the freestanding GaN substrate.
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Abstract
A method of fabricating a freestanding gallium nitride (GaN) substrate includes: preparing a GaN substrate within a reactor; supplying HCl and NH3 gases into the reactor to treat the surface of the GaN substrate and forming a porous GaN layer; forming a GaN crystal growth layer on the porous GaN layer; and cooling the GaN substrate on which the GaN crystal growth layer has been formed and separating the GaN crystal growth layer from the substrate. According to the fabrication method, the entire process including forming a porous GaN layer and a thick GaN layer is performed in-situ within a single reactor. The method is significantly simplified compared to a conventional fabrication method. The fabrication method enables the entire process to be performed in one chamber while allowing GaN surface treatment and growth to be performed using HVPE process gases, thus resulting in a significant reduction in manufacturing costs. The fabrication method also allows self-separation of thick GaN without cracking, thus achieving a short process time and a high manufacturing yield.
48 Citations
26 Claims
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1. A method of fabricating a freestanding gallium nitride (GaN) substrate, the method comprising:
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preparing a GaN substrate layer within a reactor;
supplying HCl and NH3 gases into the reactor to treat a surface of the GaN substrate layer and forming a porous GaN layer in the GaN substrate layer;
forming a GaN crystal growth layer on the porous GaN layer; and
cooling the GaN substrate layer on which the porous GaN layer and the GaN crystal growth layer are formed and separating the GaN crystal growth layer from the GaN substrate layer and GaN porous layer to provide the freestanding GaN substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method of fabricating a freestanding gallium nitride (GaN) substrate, the method comprising:
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loading a GaN wafer into a reactor;
supplying HCl and NH3 gases into the reactor to treat a surface of the GaN wafer and forming a porous GaN layer in the GaN wafer;
forming a GaN crystal growth layer on the porous GaN layer; and
cooling the GaN wafer on which the porous GaN layer and GaN crystal growth layer are formed such that the GaN crystal growth layer separates from the GaN wafer and GaN porous layer to provide the freestanding GaN substrate. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26)
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Specification