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ULTRA THIN FET

  • US 20070082480A1
  • Filed: 09/08/2006
  • Published: 04/12/2007
  • Est. Priority Date: 09/08/2005
  • Status: Active Grant
First Claim
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1. The process of manufacture of a semiconductor device having a die thickness less than about 10 micrometers;

  • said process comprising forming an etch stop layer in the top surface of a wafer having a thickness greater than about 300 micrometers;

    forming a thin junction receiving layer of semiconductor material of thickness less than about 10 microns atop said etch stop layer;

    forming a junction pattern in said thin junction receiving layer and forming spaced coplanar contacts atop said thin junction receiving layer;

    removably attaching a wafer carrier mount to said top surface of said thin junction receiving layer;

    removing the bulk of said wafer from its bottom surface to said etch stop layer with said wafer carrier providing sufficient strength to said thin layer to permit its handling without breakage;

    metallizing the exposed bottom surface of said wafer with a conductive layer of sufficient thickness and strength to allow handling of said thin layer without damage; and

    thereafter removing said removable wafer carrier mount.

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