Photonic structures for efficient light extraction and conversion in multi-color light emitting devices

• US 20070085100A1
• Filed: 10/14/2005
• Published: 04/19/2007
• Est. Priority Date: 10/14/2005
• Status: Active Grant

• Current Assignee: Regents of the University of California (University of California)
• Original Assignee: Regents of the University of California (University of California)
• Inventors: David, Aurelien, Weisbuch, Claude, Diana, Frederic, Petroff, Pierre
• Granted Patent: US 7,768,023 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02B 2006/1213 comprising photonic band-gap structures or photonic lattices
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/502 Wavelength conversion materials

Abstract

A high efficiency light emitting diode (LED) comprised of a substrate, a buffer layer grown on the substrate (if such a layer is needed), a first active region comprising primary emitting species (PES) that are electrically-injected, a second active region comprising secondary emitting species (SES) that are optically-pumped by the light emitted from the PES, and photonic crystals, wherein the photonic crystals act as diffraction gratings to provide high light extraction efficiency, to provide efficient excitation of the SES, and/or to modulate the far-field emission pattern.

Claims

1. A high efficiency light emitting diode (LED) comprising:

(a) a substrate;

(b) a first active region, formed on the substrate, and including one or more primary emitting species (PES) that are electrically-injected;

(c) one or more photonic crystals, formed on the first region; and

(d) a second active region, formed on the photonic crystals, and including one or more secondary emitting species (SES) that are optically-pumped;

(e) wherein the photonic crystals extract waveguided modes emitted by the PES to optically pump the SES.

2. A high efficiency light emitting diode (LED) comprising:

(a) a first active region including one or more primary emitting species (PES) in a PES layer that are electrically-injected;

(b) a second active region including one or more secondary emitting species (SES) in an SES layer that are optically-pumped; and

(c) one or more photonic crystals, formed proximate to the first and second regions, wherein the photonic crystals extract waveguided (WG) modes emitted by the PES and the SES.

3. The LED of claim 2, wherein the first active region, second active region and photonic crystals are supported by a substrate or other structure.

4. The LED of claim 2, wherein the photonic crystals, acting as scattering centers or diffraction gratings, extract the WG modes emitted by the PES, extract the WG modes emitted by the SES, and control directionality or isotropy of far-field emission patterns.

5. The LED of claim 2, wherein one or more intermediate layers are integrated above or below the PES layer or the SES layer.

6. The LED of claim 5, wherein one or more of the intermediate layers are textured.

7. The LED of claim 2, wherein parameters of the photonic crystals are chosen such that light extraction is optimized upwards or downwards.

8. The LED of claim 7, wherein the parameters of the photonic crystals vary across the LED.

9. The LED of claim 2, wherein the photonic crystals are one-dimensional (1D) diffraction gratings that provide light extraction in all directions close to a direction perpendicular to the gratings.

10. The LED of claim 2, wherein the photonic crystals are periodic, quasi-periodic, or short-range ordered two-dimensional (2D) scattering centers or diffraction gratings that provide omni-directional light extraction or directional far-field emission patterns.

11. The LED of claim 2, wherein the photonic crystals are randomly textured two-dimensional (2D) scattering regions that provide omni-directional light extraction and isotropic emission far-field patterns.

12. The LED of claim 2, further comprising metallic or dielectric mirrors for redirecting portions of emitted light that escape in unwanted directions.

13. The LED of claim 2, further comprising metallic or dielectric mirrors to recycle light emitted from the PES or SES.

14. The LED of claim 2, further comprising metallic or dielectric mirrors positioned above or below the PES layer or the SES layer to form microcavities.

15. The LED of claim 2, wherein the SES layer is coated with another layer providing air insulation or improved light extraction efficiency.

16. A method of fabricating a high efficiency light emitting diode (LED), comprising:

(a) forming a first active region including one or more primary emitting species (PES) in a PES layer that are electrically-injected;

(b) forming a second active region including one or more secondary emitting species (SES) in an SES layer that are optically-pumped; and

(c) forming one or more photonic crystals proximate the first and second regions, wherein the photonic crystals extract waveguided (WG) modes emitted by the PES and the SES.

17. The method of claim 16, wherein the first active region, second active region and photonic crystals are supported by a substrate or other structure.

18. The method of claim 16, wherein the photonic crystals, acting as scattering centers or diffraction gratings, extract the WG modes emitted by the PES, extract the WG modes emitted by the SES, and control directionality or isotropy of far-field emission patterns.

19. The method of claim 16, wherein one or more intermediate layers are integrated above or below the PES layer or the SES layer.

20. The method of claim 19, wherein one or more of the intermediate layers are textured.

21. The method of claim 16, wherein parameters of the photonic crystals are chosen such that light extraction is optimized upwards or downwards.

22. The method of claim 21, wherein the parameters of the photonic crystals vary across the LED.

23. The method of claim 16, wherein the photonic crystals are one-dimensional (1D) diffraction gratings that provide light extraction in all directions close to a direction perpendicular to the gratings.

24. The method of claim 16, wherein the photonic crystals are periodic, quasi-periodic, or short-range ordered two-dimensional (2D) scattering centers or diffraction gratings that provide omni-directional light extraction or directional far-field emission patterns.

25. The method of claim 16, wherein the photonic crystals are randomly textured two-dimensional (2D) scattering regions that provide omni-directional light extraction and isotropic emission far-field patterns.

26. The method of claim 16, further comprising forming metallic or dielectric mirrors for redirecting portions of emitted light that escape in unwanted directions.

27. The method of claim 16, further comprising forming metallic or dielectric mirrors to recycle light emitted from the PES or SES.

28. The method of claim 16, further comprising forming metallic or dielectric mirrors positioned above or below the PES layer or the SES layer to form microcavities.

29. The method of claim 16, wherein the SES layer is coated with another layer providing air insulation or improved light extraction efficiency.

30. A device fabricated according to the method of claim 16.