CAPPING OF COPPER STRUCTURES IN HYDROPHOBIC ILD USING AQUEOUS ELECTRO-LESS BATH

• US 20070085162A1
• Filed: 08/31/2006
• Published: 04/19/2007
• Est. Priority Date: 03/31/2004
• Status: Abandoned Application

• Current Assignee: Justin Brask, Kevin O'Brien
• Original Assignee: Justin Brask, Kevin O'Brien
• Inventors: Brask, Justin, O'Brien, Kevin
• Application Number:
  US11/469,263
• Publication Number:
  US 20070085162A1
• Time in Patent Office: Days
• US Class Current: 257/499
• CPC Class Codes: C23C 18/161 from plating step, e.g. inkjet
• CPC Class Codes: C23C 18/1619 Apparatus for electroless plating
• CPC Class Codes: C23C 18/1632 Features specific for the apparatus, e.g. layout of cells and of its equipment, multiple cells
• CPC Class Codes: C23C 18/1666 Ultrasonics
• CPC Class Codes: C23C 18/31 Coating with metals
• CPC Class Codes: H01L 21/288 from a liquid, e.g. electrolytic deposition
• CPC Class Codes: H01L 21/76849 the layer being positioned on top of the main fill metal

Abstract

Capping of copper structures in hydrophobic interlayer dielectric layer, using aqueous electro-less bath is described herein.

Claims

1. An apparatus comprising:

a chamber adapted for cobalt deposition, including a holder to hold a substrate with a hydrophobic interlayer dielectric layer; and

a sonic energy generator coupled to the chamber and adapted to allow sonic energy be applied during deposition of cobalt to cap a number of copper structures disposed on the hydrophobic interlayer dielectric layer.

2. The apparatus of claim 1, wherein the apparatus further comprises at least one tank coupled to the chamber and adapted to store and to provide the interlayer dielectric layer with an aqueous electro-less bath;

and the sonic energy generator is also adapted to allow sonic energy be applied during the provision of the aqueous electro-less bath.

3. The apparatus of claim 1, wherein the sonic energy generator is adapted to apply a selected one of mega and ultra sonic energy.

4. The apparatus of claim 1, wherein the sonic energy generator is adapted to apply the sonic energy at a frequency range of 10 to 1200 kilohertz.

5. The apparatus of claim 1, wherein the sonic energy generator is adapted to apply the sonic energy at a power level in a range of 1 to 5 watts/cm².

6. An apparatus comprising:

a chamber including a holder to hold a substrate with a hydrophobic interlayer dielectric layer;

at least one tank coupled to the chamber and adapted to store and to provide the interlayer dielectric layer with an aqueous electro-less bath; and

a sonic energy generator coupled to the chamber and adapted to allow sonic energy be applied during the provision of the aqueous electro-less bath.

7. The apparatus of claim 6, wherein the sonic energy generator is adapted to apply a selected one of mega and ultra sonic energy.

8. The apparatus of claim 6, wherein the sonic energy generator is adapted to apply the sonic energy at a frequency range of 10 to 1200 kilohertz.

9. The apparatus of claim 6, wherein the sonic energy generator is adapted to apply the sonic energy at a power level in a range of 1 to 5 watts/cm².

10. An apparatus comprising:

a hydrophobic interlayer dielectric layer substantially free of adhered cobalt particles;

a copper structure disposed on the interlayer dielectric layer; and

a cobalt capping layer disposed on a top surface of the copper structure.

11. The apparatus of claim 10, wherein the hydrophobic interlayer dielectric layer has a low K value where K is a dielectric constant lower than 3.5.

12. A system comprising:

a semiconductor package comprising a die, the die having

a hydrophobic interlayer dielectric layer that is substantially free of adhered cobalt, and a plurality of cobalt capped copper structures disposed on the interlayer dielectric layer;

a bus coupled to the semiconductor package; and

a network interface module coupled to the bus.

13. The system of claim 12, wherein the semiconductor package comprises a semiconductor device selected from a semiconductor device group consisting of a microprocessor, a memory device, a graphics processor, a digital signal processor, and a crypto processor.

14. The system of claim 13, wherein the system is a selected one of a a digital versatile disk player, an audio/video media player, and a set-top box.