Method for Reducing Word Line Current in Magnetoresistive Random Access Memory and Structure Thereof

• US 20070086233A1
• Filed: 10/06/2006
• Published: 04/19/2007
• Est. Priority Date: 10/17/2005
• Status: Active Grant

• Current Assignee: Northern Lights Semiconductor Corp.
• Original Assignee: Northern Lights Semiconductor Corp.
• Inventors: Agan, Tom, Lai, James
• Granted Patent: US 7,423,328 B2
• Time in Patent Office: Days
• US Class Current: 365/158
• CPC Class Codes: G11C 11/15 using multiple magnetic layers G11C11/155 takes precedence

Abstract

The method for reducing word line currents in magnetoresistive random access memory (MRAM) includes disposing the MRAM bit between a pair of word lines according to a magnetic field strength is increased when a distance between a magnetic section and its corresponding word line is decreased.

Claims

1. The method for reducing word line currents in magnetoresistive random access memory (MRAM), comprising:

forming an MRAM bit, comprising;

forming a conductive section on a first magnetic section;

forming a second magnetic section on the conductive section;

disposing the MRAM bit between a pair of word lines, wherein the first magnetic section to a first word line is in the range of 50 Angstroms to 200 Angstroms, and the second magnetic section to a second word line is in the range of 50 Angstroms to 200 Angstroms according to a magnetic field strength is squared when a distance between the first magnetic section or the second magnetic section to the corresponding word line is halved.

2. An magnetoresistive random access memory (MRAM), comprising:

an MRAM bit, comprising;

a first magnetic section;

a second magnetic section; and

a conductive section, disposed between and in direct contact with both the first and second magnetic section; and

at least two word lines, one of the word lines disposed adjacent to and has a distance of 50 Angstroms to 200 Angstroms with the first magnetic section, capable of generating a first magnetic field to control a dipole of the first magnetic section when a smaller first current flows on the word line, and the other word line disposed adjacent to and has a distance of 50 Angstroms to 200 Angstroms with the second magnetic section, capable of generating a second magnetic field to control a dipole of the second magnetic section when a smaller second current flows on the word line,

wherein the first or second current is derived according to the magnetic field strength is increased in square when the distance between the word line and the corresponding magnetic section is halved.

3. The MRAM of claim 2, wherein the MRAM bit further comprises the first metal terminal and the second metal terminal, the first metal terminal is disposed adjacent to one end of an opposite surface to the conductive section of the first magnetic section, and the second metal terminal is disposed adjacent to the other end of the opposite surface to the conductive section of the first magnetic section.

4. An magnetoresistive random access memory (MRAM), comprising:

an MRAM bit, comprising;

a first magnetic section;

a second magnetic section; and

a conductive section, disposed between and in direct contact with both the first and second magnetic section; and

at least two word lines, one of the word line disposed adjacent to and having a distance of 50 Angstroms to 200 Angstroms with the first magnetic section, capable of generating a first magnetic field to control a dipole of the first magnetic section when a first current flows on the word line, and the other word line disposed adjacent to and having a distance of 50 Angstroms to 200 Angstroms with the second magnetic section, capable of generating a second magnetic field to control a dipole of the second magnetic section when a second current flows on the word line,

wherein a much larger magnetic field strength is obtained when the distance between the word line and the corresponding magnetic section is decreased and the first or second current is unchanged.

5. The MRAM of claim 4, wherein the MRAM bit further comprises the first metal terminal and the second metal terminal, the first metal terminal is disposed adjacent to one end of an opposite surface to the conductive section of the first magnetic section, and the second metal terminal is disposed adjacent to the other end of the opposite surface to the conductive section of the first magnetic section.