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Semiconductor light emitting device

  • US 20070086496A1
  • Filed: 02/21/2006
  • Published: 04/19/2007
  • Est. Priority Date: 10/13/2005
  • Status: Abandoned Application
First Claim
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1. A semiconductor light emitting device comprising:

  • a first cladding layer made of nitride semiconductor of a first conductivity type;

    an active layer provided on the first cladding layer, the active layer including a first barrier layer made of nitride semiconductor, a second barrier layer made of nitride semiconductor, and a well layer made of nitride semiconductor, the well layer being provided between the first barrier layer and the second barrier layer; and

    a second cladding layer provided on the active layer, the second cladding layer being made of nitride semiconductor of a second conductivity type, the first and second barrier layers and the well layer containing indium, and at least one of the first barrier layer and the second barrier layer having a thickness of 30 nm or more.

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