Method of forming a device package having edge interconnect pad
First Claim
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1. A method for forming an edge interconnect pad to a MEMS device package, comprising:
- forming an array of MEMS devices overlaying at least one conductive via that electrically connects to an underlying layer;
depositing, by way of a damascene process, a conductive material on a substrate that is coplanar with the array of MEMS devices, the conductive material coupling to the at least one conductive via; and
covering the array of MEMS devices and the conductive material with a passivation layer.
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Abstract
A method of forming a device package having an edge interconnect pad includes forming an array of MEMS devices overlaying at least one conductive via that electrically connects to an underlying layer. The method continues with depositing, by way of a damascene process, a conductive material on a substrate that is coplanar with the array of MEMS devices, the conductive material coupling to the at least one conductive via. The method also includes covering the array of MEMS devices and the conductive material with a passivation layer.
14 Citations
26 Claims
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1. A method for forming an edge interconnect pad to a MEMS device package, comprising:
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forming an array of MEMS devices overlaying at least one conductive via that electrically connects to an underlying layer;
depositing, by way of a damascene process, a conductive material on a substrate that is coplanar with the array of MEMS devices, the conductive material coupling to the at least one conductive via; and
covering the array of MEMS devices and the conductive material with a passivation layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for enabling edge coupling to a MEMS/CMOS device package, comprising:
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forming an electrically conductive via in a CMOS layer;
forming a MEMS device layer atop the CMOS layer, thereby creating a MEMS/CMOS device package;
depositing, by way of a damascene process, a conductive channel that couples to the electrically conductive via and extends towards the edge of the MEMS/CMOS device package; and
bonding a cover to the MEMS/CMOS device, wherein the cover overlays the conductive channel and the MEMS/CMOS device. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A method for forming an edge interconnect pad to a MEMS device package, comprising:
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forming a conductive via extending from the MEMS device;
etching a trench in a seal ring that extends outward from the MEMS device, the trench making electrical contact with the conductive via; and
depositing a layer of metal within the trench by way of a damascene process. - View Dependent Claims (18, 19, 20, 21, 23, 24, 25, 26)
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Specification