Semiconductor device and manufacturing method thereof
First Claim
1. A semiconductor device comprising:
- a gate electrode over a substrate;
a gate insulating film over the gate electrode;
a first source or drain electrode over the gate insulating film;
an island-shaped semiconductor film over the first source or drain electrode; and
a second source or drain electrode over the island-shaped semiconductor film and the first source or drain electrode, wherein the second source or drain electrode is in contact with the first source or drain electrode; and
wherein the island-shaped semiconductor film is sandwiched between the first source or drain electrode and the second source or drain electrode.
1 Assignment
0 Petitions
Accused Products
Abstract
An object is to obtain a semiconductor device with improved characteristics by reducing contact resistance of a semiconductor film with electrodes or wirings, and improving coverage of the semiconductor film and the electrodes or wirings. The present invention relates to a semiconductor device including a gate electrode over a substrate, a gate insulating film over the gate electrode, a first source or drain electrode over the gate insulating film, an island-shaped semiconductor film over the first source or drain electrode, and a second source or drain electrode over the island-shaped semiconductor film and the first source or drain electrode. Further, the second source or drain electrode is in contact with the first source or drain electrode, and the island-shaped semiconductor film is sandwiched between the first source or drain electrode and the second source or drain electrode. Moreover, the present invention relates to a manufacturing method of the semiconductor device.
73 Citations
10 Claims
-
1. A semiconductor device comprising:
-
a gate electrode over a substrate;
a gate insulating film over the gate electrode;
a first source or drain electrode over the gate insulating film;
an island-shaped semiconductor film over the first source or drain electrode; and
a second source or drain electrode over the island-shaped semiconductor film and the first source or drain electrode, wherein the second source or drain electrode is in contact with the first source or drain electrode; and
wherein the island-shaped semiconductor film is sandwiched between the first source or drain electrode and the second source or drain electrode.
-
-
2. A semiconductor device comprising:
-
a gate electrode over a substrate;
a gate insulating film over the gate electrode;
a first source or drain electrode over the gate insulating film;
an island-shaped semiconductor film over the first source or drain electrode;
an island-shaped impurity semiconductor film added with an impurity imparting one conductivity type over the island-shaped semiconductor film; and
a second source or drain electrode over the island-shaped semiconductor film, the island-shaped impurity semiconductor film, and the first source or drain electrode, wherein the second source or drain electrode is in contact with the first source or drain electrode; and
wherein the island-shaped semiconductor film and the island-shaped impurity semiconductor film are sandwiched between the first source or drain electrode and the second source or drain electrode. - View Dependent Claims (3, 4)
-
-
5. A manufacturing method of a semiconductor device comprising the steps of:
-
forming a gate electrode over a substrate;
forming a gate insulating film over the gate electrode;
forming first source or drain electrode over the gate insulating film;
forming an island-shaped semiconductor film over the first source or drain electrode; and
forming a second source or drain electrode over the first source or drain electrode and the island-shaped semiconductor film, wherein the second source or drain electrode is in contact with the first source or drain electrode; and
wherein the island-shaped semiconductor film is sandwiched between the first source or drain electrode and the second source or drain electrode. - View Dependent Claims (6)
-
-
7. A manufacturing method of a semiconductor device comprising the steps of:
-
forming a first conductive film over a substrate;
forming a gate electrode using the first conductive film;
forming a gate insulating film over the gate electrode;
forming a second conductive film over the gate insulating film;
forming a first source or drain electrode using the second conductive film;
forming a semiconductor film over the first source or drain electrode;
forming an island-shaped semiconductor film using the semiconductor film;
forming a third conductive film over the first source or drain electrode and the island-shaped semiconductor film; and
forming a second source or drain electrode using the third conductive film, wherein the second source or drain electrode is in contact with the first source or drain electrode; and
wherein the island-shaped semiconductor film is sandwiched between the first source or drain electrode and the second source or drain electrode.
-
-
8. A manufacturing method of a semiconductor device comprising the steps of:
-
forming a gate electrode over a substrate;
forming a gate insulating film over the gate electrode;
forming a first source or drain electrode over the gate insulating film;
forming an island-shaped semiconductor film over the first source or drain electrode;
forming an island-shaped impurity semiconductor film added with an impurity imparting one conductivity type over the island-shaped semiconductor film; and
forming a second source or drain electrode over the first source or drain electrode, the island-shaped semiconductor film, and the island-shaped impurity semiconductor film, wherein the second source or drain electrode is in contact with the first source or drain electrode; and
wherein the island-shaped semiconductor film and the island-shaped impurity semiconductor film are sandwiched between the first source or drain electrode and the second source or drain electrode. - View Dependent Claims (9, 10)
-
Specification