Semiconductor device manufacturing method

• US 20070087579A1
• Filed: 03/08/2005
• Published: 04/19/2007
• Est. Priority Date: 03/31/2004
• Status: Abandoned Application

• Current Assignee: Hitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
• Original Assignee: Hitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
• Inventors: Horii, Sadayoshi, Kitayama, Kanako
• Application Number:
  US10/574,893
• Publication Number:
  US 20070087579A1
• Time in Patent Office: Days
• US Class Current: 438/778
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: H01J 37/32477 characterised by the means for protecting vessels or internal parts, e.g. coatings
• CPC Class Codes: H01J 37/32522 Temperature
• CPC Class Codes: H01L 21/02148 the material containing hafnium, e.g. HfSiOx or HfSiON
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02167 the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02181 the material containing hafnium, e.g. HfO2
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/31691 with perovskite structure

Abstract

A semiconductor device manufacturing method by which a process chamber can be self-cleaned, while keeping a temperature in the process chamber low or a semiconductor device manufacturing method by which a high-k film adhering in the process chamber can be effectively removed. The method is provided with a pre-coat process, a film forming process and a cleaning process. Activated F* or Cl* by remote plasma passes through a high-k film (31), reacts to a pre-coat film (30) composed of SiO2 or Si. Since the pre-coat film (30) peels in pieces, the high-k film over the pre-coat film can be removed together.

Claims

1. A method of manufacturing a semiconductor device, comprising the steps of:

pre-coating a pre-coating film, which differs from a film to be formed to a substrate, to a processing chamber inside,

forming the film to the substrate in the processing chamber after the pre-coating, and

cleaning the processing chamber inside by supplying a reactant into the processing chamber after forming the film,

wherein, in the cleaning step, the film adhered to the processing chamber inside is removed together with the pre-coating film by reacting the reactant with the pre-coating film without substantially reacting with the film adhered to the processing chamber inside in the film forming step.

5. A method of manufacturing a semiconductor device according to claim 1, wherein, in the film forming step, a High-k film is formed.

6. A method of manufacturing a semiconductor device according to claim 5, wherein the High-k film is a film containing Hf.

7. A method of manufacturing a semiconductor device according to claim 6, wherein the film containing Hf is an HfO₂ film or an Hf silicate film.

8. A method of manufacturing a semiconductor device according to claim 5, wherein, in the pre-coating step, a film containing Si is pre-coated.

9. A method of manufacturing a semiconductor device according to claim 8, wherein the film containing Si is a film of at least one kind selected from a group consisting of SiO₂, Si or SiC.

10. A method of manufacturing a semiconductor device according to claim 8, wherein the reactant used in the cleaning step contains F or Cl.

11. A method of manufacturing a semiconductor device according to claim 8, wherein the reactant used in the cleaning step is an active species obtained by activating a gas containing F or Cl by a plasma.

12. A method of manufacturing a semiconductor device according to claim 8, wherein the reactant used in the cleaning step is an active species obtained by activating a mixed gas of a gas containing F or Cl and Ar by a plasma.

13. A method of manufacturing a semiconductor device according to claim 8, wherein the reactant used in the cleaning step is F* or Cl*.

14. A method of manufacturing a semiconductor device according to claim 8, wherein, in the cleaning step, a cleaning temperature is made a temperature within a range not lower than 100°

C. and not higher than 400°

C.

15. A method of manufacturing a semiconductor device according to claim 10, wherein, in the processing chamber inside, an Al-made member exists.

16. A method of manufacturing a semiconductor device according to claim 10, wherein the processing chamber is a cold wall type.

2. A method of manufacturing a semiconductor device, comprising the steps of:

pre-coating a pre-coating film, which differs from a film to be formed to a substrate, to a processing chamber inside,

forming the film to the substrate in the processing chamber after the pre-coating, and

cleaning the processing chamber inside by supplying a reactant into the processing chamber after forming the film,

wherein, in the cleaning step, a film adhered to the processing chamber inside is removed together with the pre-coating film by making such that an etching rate of the pre-coating film becomes higher than an etching rate of the film adhered to the processing chamber inside in the film forming step.

3. A method of manufacturing a semiconductor device, comprising the steps of:

pre-coating a pre-coating film, which consists of a material other than a High-k film, to a substrate processing chamber inside,

forming the High-k film to a substrate in the processing chamber after the pre-coating, and

cleaning the processing chamber inside by supplying a reactant into the processing chamber after forming the film,

wherein, in the cleaning step, the High-k film adhered to the processing chamber inside is removed together with the pre-coating film by making a cleaning temperature into a temperature of such a degree that the reactant reacts with the pre-coating film without reacting with the High-k film adhered to the processing chamber inside.

4. A method of manufacturing a semiconductor device, comprising the steps of:

pre-coating a pre-coating film, which consists of a material other than a High-k film, to a substrate processing chamber inside,

forming the High-k film to a substrate in the processing chamber after the pre-coating, and

cleaning the processing chamber inside by supplying a reactant into the processing chamber after forming the film,

wherein, in the cleaning step, a cleaning temperature is made a temperature within a range not lower than 100°

C. and not higher than 400°

C.