Substrate-supporting device

• US 20070089670A1
• Filed: 10/18/2005
• Published: 04/26/2007
• Est. Priority Date: 10/18/2005
• Status: Active Grant

• Current Assignee: ASM Japan K.K. (ASM International NV)
• Original Assignee: ASM Japan K.K. (ASM International NV)
• Inventors: Ikedo, Yozo
• Granted Patent: US 7,691,205 B2
• Time in Patent Office: Days
• US Class Current: 118/50
• CPC Class Codes: C23C 16/4581 characterised by material of construction or surface finish of the means for supporting the substrate
• CPC Class Codes: C23C 16/4585 Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds

Abstract

A substrate-supporting device for CVD having a substrate-supporting region includes: a substrate-supporting surface which is a continuous surface defining a reference plane on which a substrate is placed; and multiple dimples having bottom surfaces lower than the reference plane. The respective dimples are isolated from each other by a portion of the substrate-supporting surface.

Claims

1. A substrate-supporting device for CVD having a substrate-supporting region comprising:

a substrate-supporting surface which is a continuous surface defining a reference plane on which a substrate is placed; and

multiple dimples having bottom surfaces lower than the reference plane, the respective dimples being isolated from each other by a portion of the substrate-supporting surface.

2. The substrate-supporting device according to claim 1, wherein the substrate-supporting surface has an area which is less than 50% of that of the substrate-supporting region.

3. The substrate-supporting device according to claim 2, wherein the substrate-supporting surface has an area which is about 20% or less of that of the substrate-supporting region.

4. The substrate-supporting device according to claim 1, wherein each dimple has a circular shape on the reference plane.

5. The substrate-supporting device according to claim 4, wherein the number of the multiple dimples is three ore more.

6. The substrate-supporting device according to claim 5, wherein every three dimples adjacent to each other are arranged such that imaginary lines connecting respective centers of the three circular shapes form an equilateral triangle.

7. The substrate-supporting device according to claim 1, wherein each dimple has a rectangular shape.

8. The substrate-supporting device according to claim 7, wherein the substrate-supporting surface is shaped into cross stripes.

9. The substrate-supporting device according to claim 1, wherein the substrate-supporting surface has a peripheral area on the reference plane which has no dimple.

10. The substrate-supporting device according to claim 1, wherein the substrate-supporting region has multiple lift pin holes.

11. The substrate-supporting device according to claim 1, wherein the substrate-supporting surface has a surface roughness (Ra) of about 1 μ

m or less.

12. The substrate-supporting device according to claim 1, wherein the substrate-supporting surface is constituted by an anodized oxide film formed on an aluminum or aluminum alloy.

13. The substrate-supporting device according to claim 1, wherein the dimples have a depth of about 0.05 mm to about 1.0 mm.

14. The substrate-supporting device according to claim 1, further comprising an outer peripheral area outside the substrate-supporting region, said outer peripheral area having a height which is higher than the reference plane.

15. The substrate-supporting device according to claim 14, wherein the outer peripheral area has multiple holes for fastening screws.

16. A CVD apparatus for forming a thin film on a substrate, comprising:

a vacuum chamber;

a gas inlet port installed in the vacuum chamber for introducing a gas into the vacuum chamber; and

the substrate-supporting device of claim 1 being installed in the vacuum chamber.

17. The CVD apparatus according to claim 16, further comprising a heater on which the substrate-supporting device is mounted and fixed with screws.

18. The CVD apparatus according to claim 16, which is a plasma CVD wherein the gas inlet port is a shower plate serving as one electrode, and the substrate-supporting device is installed practically parallel to and facing the shower plate and serves as another electrode.