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Etching solution for silicon oxide and method of manufacturing a semiconductor device using the same

  • US 20070090325A1
  • Filed: 10/16/2006
  • Published: 04/26/2007
  • Est. Priority Date: 10/26/2005
  • Status: Active Grant
First Claim
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1. An etching solution for silicon oxide comprising:

  • about 0.2 to about 5.0 percent by weight of a hydrogen fluoride (HF) solution;

    about 0.05 to about 20.0 percent by weight an ammonium fluoride (NH4F) solution; and

    about 40.0 to about 70.0 percent by weight of an alkyl hydroxide solution;

    wherein the etching solution etches a silicon oxide layer preventing damage to a metal silicide layer exposed by an opening in a process for enlarging the opening through the silicon oxide layer.

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