PROCESS FOR THE FABRICATION OF THIN-FILM DEVICE AND THIN-FILM DEVICE

• US 20070090404A1
• Filed: 12/07/2006
• Published: 04/26/2007
• Est. Priority Date: 02/25/2003
• Status: Abandoned Application

• Current Assignee: Akihiko Asano, Tomoatsu Kinoshita
• Original Assignee: Akihiko Asano, Tomoatsu Kinoshita
• Inventors: Asano, Akihiko, Kinoshita, Tomoatsu
• Application Number:
  US11/567,812
• Publication Number:
  US 20070090404A1
• Time in Patent Office: Days
• US Class Current: 257/211
• CPC Class Codes: G02F 1/13613 the semiconductor element being formed on a first substrate and thereafter transferred to the final cell substrate
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays

Abstract

A thin-film device is fabricated by forming a protective layer and a thin-film device layer one by one on a first substrate and bonding a second substrate on the thin-film device layer via a first adhesive layer or a coating layer and first adhesive layer, removing the first substrate at least in a part thereof by etching with a chemical solution, bonding the protective layer, which covers the thin-film device layer on a side of the first substrate, to a third substrate via a second adhesive layer, and removing the second substrate. The protective layer is formed of at least two layers having resistance to the chemical solution used upon removal of the first substrate.

Claims

1. A thin-film device formed by performing the following steps:

forming a protective layer and a thin-film device layer one by one on a first substrate, and bonding a second substrate on said thin-film device layer via at least a first adhesive layer,

removing said first substrate at least in a part thereof by etching with a chemical solution,

bonding said protective layer, which covers said thin-film device layer on a side of said first substrate, to a third substrate via a second adhesive layer, and

removing said second substrate;

wherein said protective layer is formed of at least two layers having resistance to said chemical solution used upon removal of said first substrate.

2. The process for the fabrication of a thin-film device as claimed in claim 1, wherein said second substrate is bonded on said thin-film device layer via a coating layer and said first adhesive layer.

3. A thin-film device formed by performing the following steps:

forming a protective layer and a thin-film device layer one by one on a first substrate, and bonding a second substrate on said thin-film device layer via at least a first adhesive layer,

separating said first substrate at least in a part thereof by etching with a chemical solution,

bonding said protective layer, which covers said thin-film device layer on a side of said first substrate, to a third substrate via a second adhesive layer, and

separating said second substrate;

wherein said protective layer is formed of at least two layers having resistance to said chemical solution used upon separation of said first substrate.

4. The process for the fabrication of a thin-film device as claimed in claim 3, wherein said second substrate is bonded on said thin-film device layer via a coating layer and said first adhesive layer.