Power semiconductor device and method therefor
2 Assignments
0 Petitions
Accused Products
Abstract
A power transistor includes a plurality of transistor cells. Each transistor cell has a first electrode coupled to a first electrode interconnection region overlying a first major surface, a control electrode coupled to a control electrode interconnection region overlying the first major surface, and a second electrode coupled to a second electrode interconnection region overlying a second major surface. Each transistor cell has an approximately constant doping concentration in the channel region. A dielectric platform is used as an edge termination of an epitaxial layer to maintain substantially planar equipotential lines therein. The power transistor finds particular utility in radio frequency applications operating at a frequency greater than 500 megahertz and dissipating more than 5 watts of power. The semiconductor die and package are designed so that the power transistor can efficiently operate under such severe conditions.
136 Citations
158 Claims
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1-27. -27. (canceled)
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28. A radio frequency (RF) semiconductor device comprising:
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a die including an active area comprising an array of transistor cells, each transistor cell having a source region, a gate electrode and a drain region;
the drain regions of each transistor cell being coupled together, a metal gate interconnection on an upper surface of the die and coupled to the gate electrodes of the cells, a metal source interconnection on the upper surface of the die and coupled to the source regions of the cells, and a metal drain interconnection on a bottom surface of the die and coupled to the drain regions of the cells;
a package to make electrical connections to the source regions, gate electrodes and drain regions of the cells, said package including an external source lead serving as a heat sink and coupled to the source interconnection, an external gate lead coupled to the gate interconnection, and an external drain lead coupled to the drain interconnection; and
wherein said die and package are constructed so that the device operates at frequencies of greater than about 500 MHz and dissipates more than about 5 watts of power. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36)
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37. A semiconductor package comprising:
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a semiconductor die;
a first lead;
a pedestal extending from a first surface of the first lead;
a non-conductive member adjacent the pedestal, wherein a first portion of the semiconductor die is coupled to a first portion of the pedestal and a second portion of the semiconductor die is coupled to a first portion of the non-conductive member. - View Dependent Claims (38, 39, 40, 139)
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41-83. -83. (canceled)
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84. A method for reducing a thermal resistance of a power transistor, the power transistor having a first electrode interconnection, a control electrode interconnection region, and a second electrode interconnection, the method comprising the steps of:
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etching a semiconductor die to form a cavity that exposes a doped region corresponding to an active area of the power transistor; and
depositing a conductive layer overlying said doped region to form the second electrode interconnection. - View Dependent Claims (140)
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85-103. -103. (canceled)
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104. A radio frequency (RF) power transistor package for housing a RF power transistor die having a first electrode interconnection and a control electrode interconnection on a first major surface of the die and a second electrode interconnection on a second major surface of the die, the RF power transistor package comprising:
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a first isolation structure having a first major surface and a second major surface; and
a first lead coupled to said first major surface of said first isolation structure, said first lead having a die mount pedestal adjacent to said first isolation structure wherein a surface of said die mount pedestal is planar to or above said second major surface of said first isolation structure. - View Dependent Claims (105, 106, 107, 108, 109, 110, 111, 112, 113, 114, 141, 142)
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115-127. -127. (canceled)
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128. A method of forming a radio frequency (RF) package having relatively low inductance and relatively low thermal resistance comprising the steps of:
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providing a first lead having a die mount pedestal;
placing a first isolation ring adjacent to said die mount pedestal such that a first major surface of the isolation ring couples to a surface of said first lead; and
placing a second isolation ring overlying at least a portion of said first isolation ring;
attaching said first isolation ring to said first lead; and
attaching said second isolation ring to said first isolation ring]. - View Dependent Claims (129, 130, 131, 132)
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133-138. -138. (canceled)
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143. A semiconductor package, comprising:
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a semiconductor die having a first surface and a second surface opposite the first surface;
a first material; and
a second material different than the first material, wherein the first surface of the semiconductor die is coupled to the first and second materials and wherein the first surface of the semiconductor die overlies at least a portion of the first material and at least a portion of the second material. - View Dependent Claims (144, 145, 146, 147, 148, 149, 150, 151, 152, 153, 154, 155, 156, 157, 158)
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Specification