MEMS device and method of fabrication

• US 20070090474A1
• Filed: 09/08/2005
• Published: 04/26/2007
• Est. Priority Date: 09/08/2005
• Status: Abandoned Application

• Current Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Original Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Inventors: Diem, Bernard, Gogoi, Bishnu, Li, Gary, Desai, Hemant, Hammond, Jonathan
• Application Number:
  US11/222,547
• Publication Number:
  US 20070090474A1
• Time in Patent Office: Days
• US Class Current: 257/414
• CPC Class Codes: B81B 2203/0118 Cantilevers
• CPC Class Codes: B81B 3/0078 Constitution or structural means for improving mechanical properties not provided for in B81B3/007 - B81B3/0075
• CPC Class Codes: B81C 2201/0109 Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
• CPC Class Codes: B81C 2201/0167 by adding further layers of materials having complementary strains, i.e. compressive or tensile strain

Abstract

A MEMS device and method of fabrication including a plurality of structural tie bars for added structural integrity. The MEMS device includes an active layer and a substrate having an insulating material formed therebetween, first and second pluralities of stationary electrodes and a plurality of moveable electrodes in the active layer. A plurality of interconnects are electrically coupled to a second surface of each of the first and second pluralities of stationary electrodes. A plurality of anchors fixedly attach a first surface of each of the first and second pluralities of stationary electrodes to the substrate. A first structural tie bar couples a second surface of each of the first plurality of stationary electrodes and a second structural tie bar couples a second surface of each of the second plurality of stationary electrodes.

Claims

1. A MEMS device of the type which includes an active layer, a substrate, and an insulating material therebetween, first and second pluralities of stationary electrodes and a plurality of moveable electrodes formed in the active layer, and a plurality of anchors fixedly attaching a first surface of each of the first and second pluralities of stationary electrodes to the substrate, the MEMS device comprising:

a first structural tie bar coupled to a second surface of at least two of the first plurality of stationary electrodes; and

a second structural tie bar coupled to a second surface of at least two of the second plurality of stationary electrodes.

2. The device of claim 1 wherein the device is a high aspect ratio MEMS sensor device.

3. The device of claim 1 wherein the first and second structural tie bars comprise polysilicon.

4. The device of claim 1 wherein the first and second structural tie bars are symmetric about an axis parallel to the first and second structural tie bars and substantially evenly distributed across the MEMS device.

5. A method of fabricating a MEMS device of the type that includes an active layer, a substrate, and an insulating material formed therebetween, first and second pluralities of stationary electrodes and a plurality of moveable electrodes in the active layer, a fill material deposited between the first and second pluralities of stationary electrodes and the plurality of moveable electrodes, a layer of conductive material deposited over the first and second pluralities of stationary electrodes and the plurality of moveable electrodes wherein the method comprises:

etching the layer of conductive material to define a first interconnect electrically coupled to the first plurality of stationary electrodes and a second interconnect electrically coupled to the second plurality of stationary electrodes;

etching the layer of conductive material to define a first structural tie bar coupled to a second surface of each of the first plurality of stationary electrodes and a second structural tie bar coupled to a second surface of each of the second plurality of stationary electrodes;

removing the layer of fill material;

etching the insulating material to define a plurality of anchors fixedly attaching a first surface of each of the first and second pluralities of stationary electrodes to the substrate.

6. The method of claim 5 wherein the MEMS device is a high aspect ratio MEMS sensor device.

7. The method of claim 5 wherein the step of etching the layer of conductive material includes a reactive ion etch (RIE).

8. The method of claim 5 wherein the step of removing the layer of fill material includes etching the fill material.

9. The method of claim 8 wherein the step of removing the layer of fill material includes a hydrofluoric (HF) vapor etch.

10. The method of claim 5 wherein the step of etching the insulating material includes a hydrofluoric (HF) vapor etch.

11. The method of claim 5 wherein the first and second structural tie bars are symmetric about an axis parallel to the first and second structural tie bars and substantially evenly distributed across the MEMS device.

12. A MEMS device comprising:

a substrate;

an insulating layer on the substrate;

an active layer on the insulating layer;

a plurality of sensor electrodes in the active layer having a first surface and a second surface, at least one of the plurality of sensor electrodes further having a contact area formed on the second surface;

a plurality of interconnects each electrically coupled to at least one of the plurality of sensor electrodes;

a plurality of structural tie bars each coupled to the first surface of at least two sensor electrodes; and

a plurality of anchors fixedly attaching the second surface of at least a portion of the plurality of sensor electrodes to the substrate.

13. The device of claim 12 wherein the device is formed as a high aspect ratio MEMS sensor device.

14. The device of claim 12 wherein the substrate comprises silicon.

15. The device of claim 12 wherein the plurality of sensor electrodes are comprised of first and second pluralities of stationary electrodes and a plurality of moveable electrodes.

16. The device of claim 15 wherein the plurality of structural tie bars comprise a first plurality of structural tie bars coupled to the first plurality of stationary electrodes and a second plurality of structural tie bars coupled to the second plurality of stationary electrodes.

17. The device of claim 15 wherein the plurality of anchors fixedly attach the first and second pluralities of stationary electrodes to the substrate.

18. The device of claim 12 wherein the plurality of interconnects comprise polysilicon.

19. The device of claim 12 wherein the plurality of structural tie bars comprise polysilicon.

20. The device of claim 12 wherein the plurality of structural tie bars are symmetric about an axis parallel to the plurality of structural tie bars and substantially evenly distributed across the MEMS device.