Method of making light emitting device with silicon-containing encapsulant
First Claim
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1. A method of making a light emitting device, the method comprising the steps of:
- (A) providing a light emitting diode; and
(B) contacting the light emitting diode with a photopolymerizable composition comprising;
a silicon-containing resin comprising silicon-bonded hydrogen and aliphatic unsaturation;
a first metal-containing catalyst that may be activated by actinic radiation; and
a second metal-containing catalyst that may be activated by heat but not the actinic radiation; and
(C) heating the photopolymerizable composition to a temperature of less than 150°
C. to initiate hydrosilylation, thereby forming a first encapsulant, wherein hydrosilylation comprises reaction between the silicon-bonded hydrogen and the aliphatic unsaturation.
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Abstract
A method of making a light emitting device is disclosed herein, the method including the steps of (A) providing a light emitting diode; and (B) contacting the light emitting diode with a photopolymerizable composition comprising: a silicon-containing resin comprising silicon-bonded hydrogen and aliphatic unsaturation; a first metal-containing catalyst that may be activated by actinic radiation; and a second metal-containing catalyst that may be activated by heat but not the actinic radiation; and (C) heating the photopolymerizable composition to a temperature of less than 150° C. to initiate hydrosilylation, thereby forming a first encapsulant.
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Citations
53 Claims
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1. A method of making a light emitting device, the method comprising the steps of:
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(A) providing a light emitting diode; and
(B) contacting the light emitting diode with a photopolymerizable composition comprising;
a silicon-containing resin comprising silicon-bonded hydrogen and aliphatic unsaturation;
a first metal-containing catalyst that may be activated by actinic radiation; and
a second metal-containing catalyst that may be activated by heat but not the actinic radiation; and
(C) heating the photopolymerizable composition to a temperature of less than 150°
C. to initiate hydrosilylation, thereby forming a first encapsulant, wherein hydrosilylation comprises reaction between the silicon-bonded hydrogen and the aliphatic unsaturation. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53)
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Specification