Electric appliance, semiconductor device, and method for manufacturing the same

• US 20070093002A1
• Filed: 01/24/2005
• Published: 04/26/2007
• Est. Priority Date: 01/26/2004
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Maekawa, Shinji, Shoji, Hironobu, Yamazaki, Shunpei
• Granted Patent: US 7,691,685 B2
• Time in Patent Office: Days
• US Class Current: 438/149
• CPC Class Codes: G02F 1/136295 Materials; Compositions; Manufacture processes
• CPC Class Codes: H01L 21/288 from a liquid, e.g. electrolytic deposition
• CPC Class Codes: H01L 21/76838 characterised by the formation and the after-treatment of the conductors etching for patterning the conductors H01L21/3213
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1292 using liquid deposition, e.g. printing
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT

Abstract

In the present circumstances, a film formation method of using spin coating in a manufacturing process is heavily used. As increasing the substrate size in future, the film formation method of using spin coating becomes at a disadvantage in mass production since a mechanism for rotating a large substrate becomes large, and there is many loss of material solution or waste liquid. According to the present invention, in a manufacturing process of a semiconductor device, a microscopic wiring pattern can be realized by delivering selectively photosensitive conductive material solution by droplet discharging, exposing selectively to laser light or the like, and developing. The present invention can reduce drastically costs since a patterning process can be shortened and an amount of material in a process of forming a conductive pattern can be reduced. Accordingly, the present invention can be applied to manufacture a large substrate.

Claims

1. A method for manufacturing a semiconductor device comprising:

forming a first conductive film pattern by discharging a conductive material containing a photosensitive material over an insulating surface of a substrate by droplet discharging;

selectively exposing the first conductive film pattern to laser light; and

forming a second conductive film pattern by developing the exposed first conductive film pattern.

2. A method for manufacturing a semiconductor device according to claim 1, wherein the conductive material containing a photosensitive material comprises a material selected from the group consisting of Ag, Au, Cu, Ni, Al or Pt, and a compound thereof.

3. A method for manufacturing a semiconductor device according to claim 1, wherein the photosensitive material is a negative type photosensitive material.

4. A method for manufacturing a semiconductor device according to claim 1, wherein the photosensitive material is a positive type photosensitive material.

5. A method for manufacturing a semiconductor device comprising:

forming a first conductive film pattern by discharging a conductive material containing a photosensitive material over an insulating surface of a substrate by droplet discharging;

selectively exposing the first conductive film pattern to laser light;

forming a second conductive film pattern having a narrower width than that of the first conductive film pattern by developing the exposed first conductive film pattern;

forming a gate insulating film covering the second conductive film pattern; and

forming a semiconductor film over the gate insulating film.

6. A method for manufacturing a semiconductor device according to claim 5, wherein the conductive material containing a photosensitive material comprises a material selected from the group consisting of Ag, Au, Cu, Ni, Al or Pt, and a compound thereof

7. A method for manufacturing a semiconductor device according to claim 5, wherein the photosensitive material is a negative type photosensitive material.

8. A method for manufacturing a semiconductor device according to claim 5, wherein the photosensitive material is a positive type photosensitive material.

9. A method for manufacturing a semiconductor device comprising:

forming a gate electrode over an insulating surface of a substrate;

forming a gate insulating film covering the gate electrode;

forming a first semiconductor film over the gate insulating film;

forming a first conductive film pattern by discharging a conductive material containing a positive type photosensitive material over the first semiconductor film;

exposing a selected portion of the first conductive film pattern to laser light;

forming a source electrode and a drain electrode by developing the exposed first conductive film pattern; and

etching the first semiconductor film using the source electrode and the drain electrode as masks.

10. A method for manufacturing a semiconductor device according to claim 9, further comprising a step of forming a second semiconductor film containing an impurity element imparting n-type or p-type conductivity over the first semiconductor film.

11. A method for manufacturing a semiconductor device according to claim 10, further comprising a step of etching the second semiconductor film using the source electrode and the drain electrode as masks

12. A method for manufacturing a semiconductor device according to claim 9, wherein the conductive material containing the positive type photosensitive material is discharged by droplet discharging.

13. A method for manufacturing a semiconductor device comprising:

forming a gate electrode over a first surface of a substrate;

forming a gate insulating film covering the gate electrode;

forming a first semiconductor film over the gate insulating film;

forming a first conductive film pattern by discharging a conductive material containing a negative type photosensitive material over the first semiconductor film;

exposing a portion of the first conductive film pattern to laser light by emitting the laser light from a side of a second surface of the substrate using the gate electrode as a mask wherein the second surface is opposite to the first surface;

forming a source electrode and a drain electrode by developing the exposed first conductive film pattern; and

etching the first semiconductor film using the source electrode and the drain electrode as masks.

14. A method for manufacturing a semiconductor device according to claim 13, wherein the substrate has an insulating surface.

15. A method for manufacturing a semiconductor device according to claim 13, further comprising a step of forming a second semiconductor film containing an impurity element imparting n-type or p-type conductivity over the first semiconductor film.

16. A method for manufacturing a semiconductor device according to claim 15, further comprising a step of etching the second semiconductor film using the source electrode and the drain electrode as masks

17. A method for manufacturing a semiconductor device according to claim 13, wherein the conductive material containing the positive type photosensitive material is discharged by droplet discharging.

18. A method for manufacturing a semiconductor device according to claim 13, wherein the source electrode and the drain electrode are formed in a self-aligning manner to have a space therebetween that is the same as a width of the gate electrode.

19. A semiconductor film comprising:

at least one of a gate wiring and a gate electrode over an insulating surface of a first substrate;

a gate insulating film over at least one of the gate wiring and the gate electrode;

a semiconductor layer including a channel formation region over the gate insulating film; and

a source electrode or a drain electrode formed over the semiconductor layer,

wherein a channel length of the channel formation region and a space between the source electrode and the drain electrode have widths that are the same as that of the gate electrode.

20. A semiconductor device according to claim 19, further comprising a pixel electrode formed over the source electrode or the drain electrode.

21. A semiconductor device according to claim 19, wherein the semiconductor layer including the channel formation region is an amorphous single crystalline semiconductor film added with hydrogen or a hydrogen halide, or a polycrystalline semiconductor film.

22. A semiconductor device according to claim 19, wherein the source electrode or the drain electrode contains a photosensitive material.

23. A semiconductor device according to claim 19, wherein the semiconductor device comprises a first substrate, a second substrate, and a liquid crystal interposed between a pair of the first substrate and the second substrate.

24. A semiconductor device according to claim 19, wherein the semiconductor device comprises a plurality of light-emitting elements having a cathode, a layer containing an organic compound, an anode, and a thin film transistor.

25. A semiconductor device according to claim 19, wherein the semiconductor device is an image-voice two-way communications device or a versatile remote control device.