Pumping System for Atomic Layer Deposition
First Claim
Patent Images
1. A pumping apparatus for evacuating a reactant from a reactive region comprising:
- a vacuum able chamber;
a hearth for supporting a workpiece;
one or more gas introduction valves;
one or more exhaust evacuation valves; and
an adjustable valve providing one or more pathways there through formed by alignment of separate components of the valve, the components perforated with two or more openings to form the pathways.
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Abstract
A pumping apparatus for evacuating a reactant from a reactive region includes a vacuum able chamber, a hearth for supporting a workpiece, one or more gas introduction valves, one or more exhaust evacuation valves, and an adjustable valve providing one or more pathways there through formed by alignment of separate components of the valve, the components perforated with two or more openings to form the pathways.
290 Citations
21 Claims
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1. A pumping apparatus for evacuating a reactant from a reactive region comprising:
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a vacuum able chamber;
a hearth for supporting a workpiece;
one or more gas introduction valves;
one or more exhaust evacuation valves; and
an adjustable valve providing one or more pathways there through formed by alignment of separate components of the valve, the components perforated with two or more openings to form the pathways. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. An adjustable valve for evacuating a reactive precursor from a reactive region in a semiconductor thin film process chamber comprising:
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a first perforated component rendered stationary within the process chamber; and
a second perforated component geometrically similar to the first perforated component, the second perforated component rotable within the chamber to align one or more of the perforations common to both components to form one or more pathways through the valve and rotable within the chamber to misalign all of the perforations common to both components to prevent pathways through the valve. - View Dependent Claims (13, 14, 15, 16, 17)
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18. A method for purging a reactant from a reactive region of a semiconductor thin film process using an adjustable valve adjacent to the reactive region, the valve including a first perforated component rendered stationary within a process chamber, and an adjustable second perforated component geometrically similar to the first perforated component comprising the acts:
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(a) determining that a reaction has occurred in the reactive region; and
(b) adjusting the second perforated component to align one or more perforations common to both perforated components, the adjustment performed under vacuum pressure. - View Dependent Claims (19, 20, 21)
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Specification