Pumping System for Atomic Layer Deposition

• US 20070095283A1
• Filed: 10/26/2006
• Published: 05/03/2007
• Est. Priority Date: 10/31/2005
• Status: Abandoned Application

• Current Assignee: Carl Galewski
• Original Assignee: Carl Galewski
• Inventors: Galewski, Carl
• Application Number:
  US11/553,239
• Publication Number:
  US 20070095283A1
• Time in Patent Office: Days
• US Class Current: 118/715
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/45544 characterized by the apparatus
• CPC Class Codes: C23C 16/4585 Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
• CPC Class Codes: Y10T 137/0318 Processes

Abstract

A pumping apparatus for evacuating a reactant from a reactive region includes a vacuum able chamber, a hearth for supporting a workpiece, one or more gas introduction valves, one or more exhaust evacuation valves, and an adjustable valve providing one or more pathways there through formed by alignment of separate components of the valve, the components perforated with two or more openings to form the pathways.

Claims

1. A pumping apparatus for evacuating a reactant from a reactive region comprising:

a vacuum able chamber;

a hearth for supporting a workpiece;

one or more gas introduction valves;

one or more exhaust evacuation valves; and

an adjustable valve providing one or more pathways there through formed by alignment of separate components of the valve, the components perforated with two or more openings to form the pathways.

2. The pumping apparatus of claim 1, wherein the apparatus is used in atomic layer deposition.

3. The pumping apparatus of claim 1, wherein the apparatus is used in chemical vapor deposition.

4. The pumping apparatus of claim 1, wherein the components are annular plates arranged one above the other and wherein one of those plates may be rotated to form or to block the pathways.

5. The pumping apparatus of claim 4, wherein the plate that is not rotated is permanently affixed to the chamber and to the hearth.

6. The pumping apparatus of claim 4, wherein magnetic coupling from outside the chamber controls the rotably adjustable plate.

7. The pumping apparatus of claim 4, wherein a centrally located spindle controls the rotably adjustable plate.

8. The pumping apparatus of claim 1, wherein the chamber includes one reactive region located above the adjustable valve, and one exhaust region located below the adjustable valve.

9. The pumping apparatus of claim 1, wherein the chamber includes one reactive region located above the adjustable valve, and two or more isolated exhaust regions located below the adjustable valve, the exhaust regions isolated from one another by the rotated position of the rotably adjustable plate of the valve.

10. The pumping apparatus of claim 7, wherein the spindle is magnetically coupled to the rotably adjustable plate.

11. The pumping apparatus of claim 7, wherein the spindle is physically attached to the rotably adjustable plate.

12. An adjustable valve for evacuating a reactive precursor from a reactive region in a semiconductor thin film process chamber comprising:

a first perforated component rendered stationary within the process chamber; and

a second perforated component geometrically similar to the first perforated component, the second perforated component rotable within the chamber to align one or more of the perforations common to both components to form one or more pathways through the valve and rotable within the chamber to misalign all of the perforations common to both components to prevent pathways through the valve.

13. The adjustable valve of claim 12, wherein the semiconductor thin film process is an atomic layer deposition process.

14. The adjustable valve of claim 12, wherein the first and second perforated components are annular plates.

15. The adjustable valve of claim 12, wherein the second perforated component is adjustable using magnetic coupling.

16. The adjustable valve of claim 12, wherein the first perforated component is contiguously formed with the process chamber.

17. The adjustable valve of claim 12, wherein both perforated components have identical perforations strategically located in identical patterns.

18. A method for purging a reactant from a reactive region of a semiconductor thin film process using an adjustable valve adjacent to the reactive region, the valve including a first perforated component rendered stationary within a process chamber, and an adjustable second perforated component geometrically similar to the first perforated component comprising the acts:

(a) determining that a reaction has occurred in the reactive region; and

(b) adjusting the second perforated component to align one or more perforations common to both perforated components, the adjustment performed under vacuum pressure.

19. The method of claim 18, wherein in act (a), the determination is made according to the passing of a pre-planned time window in which the reaction is expected to have occurred and completed.

20. The method of claim 18, wherein in act (b), the perforated components are annular plates and the adjustment is a rotation of one of the plates.

21. The method of claim 18 wherein in act (a), sensors indicating the actual position of the adjustable valve are provided and control the actuation of gas introduction valves used for reactant and purge gas injection in act (b).