Apparatus and method for thin film deposition
First Claim
1. A thin film deposition apparatus having a reaction chamber for forming a thin film on a plurality of substrates rested on a susceptor, the apparatus comprising:
- a gas supply means for supplying a plurality of gases to the inside of the reaction chamber from the outside, the gases including a reaction gas;
a gas distribution means for distributing and spraying the gases supplied from the gas supply means so as to conform to the purpose of a process;
a gas retaining means having a plurality of reaction cells for partitionally accommodating and retaining the respective gases distributed from the gas distribution means;
a rotation driving means for rotating selectively one of the gas retaining means and the susceptor such that the gases retained in the respective reaction cells are exposed to the substrates in sequence; and
a gas exhaust means for pumping the gases retained by the gas retaining means to the outside of the reaction chamber.
2 Assignments
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Accused Products
Abstract
Disclosed herein is a thin film deposition apparatus having a reaction chamber for forming a thin film on a plurality of substrates rested on a susceptor. The apparatus comprises: a gas supply means for supplying a plurality of gases to the inside of the reaction chamber from the outside, the gases including a reaction gas; a gas distribution means for distributing and spraying the gases supplied from the gas supply means so as to conform to the purpose of a process; a gas retaining means having a plurality of reaction cells for partitionally accommodating and retaining the respective gases distributed from the gas distribution means; a rotation driving means for rotating the gas retaining means such that the gases retained in the respective reaction cells are exposed to the substrates in sequence; and a gas exhaust means for pumping the gases retained by the gas retaining means to the outside of the reaction chamber.
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Citations
28 Claims
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1. A thin film deposition apparatus having a reaction chamber for forming a thin film on a plurality of substrates rested on a susceptor, the apparatus comprising:
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a gas supply means for supplying a plurality of gases to the inside of the reaction chamber from the outside, the gases including a reaction gas;
a gas distribution means for distributing and spraying the gases supplied from the gas supply means so as to conform to the purpose of a process;
a gas retaining means having a plurality of reaction cells for partitionally accommodating and retaining the respective gases distributed from the gas distribution means;
a rotation driving means for rotating selectively one of the gas retaining means and the susceptor such that the gases retained in the respective reaction cells are exposed to the substrates in sequence; and
a gas exhaust means for pumping the gases retained by the gas retaining means to the outside of the reaction chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A thin film deposition method, in which a thin film is formed on a plurality of substrates rested on a susceptor inside of a reaction chamber, the method comprising the steps of:
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rotating a plurality of reaction cells above the susceptor, the reaction cells partitionally accommodating gases supplied to the inside of the reaction chamber;
continuously supplying a plurality of gases including a reaction gas to the inside of the reaction chamber from the outside;
distributing and spraying the supplied gases to the reaction cell;
forming a thin film on the substrate while the gases retained in the rotating reaction cell are exposed to the respective substrate; and
pumping and exhausting excessive gases having been exposed to the substrate to the outside. - View Dependent Claims (25, 26, 27, 28)
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23. A thin film deposition method, in which a thin film is formed on a plurality of substrates rested on a susceptor inside of a reaction chamber, the method comprising the steps of:
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rotating a plurality of reaction cells above the susceptor, the reaction cells partitionally accommodating gases supplied to the inside of the reaction chamber;
continuously supplying at least two or more reaction gases and a purge gas to the inside of the reaction chamber from the outside;
distributing and spraying the supplied gases to the reaction cell, in the order of the first reaction gas, the purge gas, the second reaction gas, the purge gas, with respect to the reaction cells;
forming an atomic layer on the substrate while the gases retained in the rotating reaction cell are exposed to the respective substrate; and
pumping and exhausting excessive gases having been exposed to the substrate to the outside.
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24. A thin film deposition method, in which a thin film is formed on a plurality of substrates rested on a susceptor inside of a reaction chamber, the method comprising the steps of:
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rotating a susceptor below a plurality of reaction cells installed so as to individually accommodate gases supplied to the inside of the reaction chamber;
continuously supplying a plurality of gases including a reaction gas to the inside of the reaction chamber from the outside;
distributing and spraying the supplied gases to the reaction cell;
forming a thin film on the substrate while the respective substrates are exposed to the gases retained in the reaction cell; and
pumping and exhausting excessive gases having been exposed to the substrate to the outside.
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Specification