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Preparation of a PH sensor, the prepared PH sensor, system comprising the same and measurement using the system

  • US 20070095663A1
  • Filed: 03/09/2006
  • Published: 05/03/2007
  • Est. Priority Date: 11/01/2005
  • Status: Abandoned Application
First Claim
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1. A preparation method of a pH sensor which is an extended gate ion-sensitive field effect transistor structure, the method comprising the steps of:

  • providing an extended gate ion sensitive field effect transistor comprising an extended gate region; and

    forming a titanium nitride film on the extended gate region by radio frequency (RF) sputtering deposition to obtain a pH sensor;

    wherein the RF sputtering deposition is performed with a titanium target under conditions of a mixture of Ar and N2 at a ratio of 1;

    2 to 1;

    5 and a flow rate of 60-90 sccm, a pressure of 0.01 to 0.04 torr, and a power of 85 to 120 W.

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