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Method of controlling a chamber based upon predetermined concurrent behavoir of selected plasma parameters as a function of selected chamber paramenters

  • US 20070095788A1
  • Filed: 12/11/2006
  • Published: 05/03/2007
  • Est. Priority Date: 05/16/2003
  • Status: Active Grant
First Claim
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1. A method of processing a workpiece on workpiece support pedestal in a plasma reactor chamber in accordance with user-selected values of plural plasma parameters selected from a group comprising ion density, wafer voltage, etch rate, wafer current, by controlling chamber parameters selected from a group comprising source power, bias power, chamber pressure, magnet coil current, gas flow rates in respective zones and gas composition in respective zones, said method comprising:

  • a. for each one of said plural plasma parameters, fetching from a memory a relevant surface of constant value corresponding to the user-selected value of said one plasma parameter, said surface being defined in a space of a dimensionality equal to the number of said selected chamber parameters, and determining an intersection of the relevant surfaces, said intersection corresponding to respective target values of the selected chamber parameters; and

    b. setting the values of said selected chamber parameters to the respective target values.

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